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Product Description: This product comprises a disposable syringe, a parylene coating microchip, 6 one-dimensional barcode labels and a sterilized paper-plastic packing pouch. It is suitable for international st...
Product Description: ZS007 Syringe for Animal Identification ZS007 is a syringe specially designed for animals, which includes a disposable syringe, a parylene coating microchip, 6 one-dimensional bar code labe...
Product Description: ZS006 is a kind of syringe that designed exclusively for animals. It contains a disposable syringe, a parylene coating microchip, 6 one-dimensional bar code labels and a sterilized paper-pl...
...chip PCF7941 The key is in strict quality control for stable and high quality.It is made by new plastic material, not recycle material.The surface of the mold is very flat and has no flash burr on the cover....
...-Source Voltage| 100V ---|--- Maximum Gate-Source Voltage Vgs(±) Gate-Source Voltage| 100V Maximum Drain Current Id Drain Current| 170mA/0.17A Source-Drain On-resistanceΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/O...
... FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 52A (Tc)...
...Chip AIMBG120R020M1 SiC Mosfet Transistors for Automotive Description of AIMBG120R020M1 The AIMBG120R020M1 is 1200V SiC Mosfet for Automotive family has been developed for current and future On-Board Charger...
... and calibrates the device exclusively through the connector terminals (VDDVSS-OUT). Specification Of MLX90316KGO-BCG-000-RE Part Number: MLX90316KGO-BCG-000-RE Linearity: ±1° ID Number:...
...Chip STL24N60M6 Power MOSFET Transistors 600V 8PowerVDFN Product Description Of STL24N60M6 STL24N60M6 is Single FETs Power MOSFET Transistors, Low gate input resistance, the Operating Temperature is -55°C ~ ...
... FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 16.4A (Tc) Drive Voltage (Max Rds On,...
... FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On...
...Chip SCT040H65G3AG SiC MOSFETs H²PAK-7 Wide Bandgap Transistors Product Description Of SCT040H65G3AG SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 packa...
..., High speed switching performances, package is H2PAK-7. Specification Of SCT040H120G3AG Part Number: SCT040H120G3AG Gate Threshold Voltage(VDS = VGS, ID = 5 MA): 1.8V To 4.2V Package: H2PAK-7 Thermal Resist...
...Chip SCT020H120G3AG Wide Bandgap Transistors 100A SiC MOSFETs Product Description Of SCT020H120G3AG SCT020H120G3AG SiC MOSFETs - 100A Wide Bandgap Transistors, improve application performance in frequency, ...
...Chip SCTWA70N120G2V Single FETs MOSFETs TO-247-4 Transistors Product Description Of SCTWA70N120G2V SCTWA70N120G2V is N-Channel Single FETs MOSFETs Transistors, Extremely low gate charge and input capacitanc...
...Chip IAUS300N08S5N014 Single FETs Transistors 16PowerSOP Module Product Description Of IAUS300N08S5N014 IAUS300N08S5N014 is OptiMOS™-5 Power-Transistor, N-Channel Transistor, Surface Mount. Specification Of...
...) Power Dissipation (Max): 300W (Tc) Package / Case: 8-PowerSFN Drain To Source Voltage: 100 V Current - Continuous Drain (Id) @ 25°C: 260A (Tc)...
... FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On)...
... FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V Current - Continuous Drain (Id)...
...Chip 8WDFN N-Channel Product Description Of NVTFS016N06CTAG NVTFS016N06CTAG is N-Channel Single FETs MOSFETs Transistors, 60V 8A (Ta), 32A (Tc) 2.5W (Ta), 36W (Tc), Surface Mount, package is 8-WDFN (3.3x3.3...