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Dynamic Random Access Memory

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Total 3252 products for dynamic random access memory Manufacture & Suppliers

MX29LV320ETXEI-70G Flash Memory Chips High-Performance Storage

... with 3.0V I/O. It has fast access time of 70ns and incorporates advanced CMOS technology. This chip is extremely low power, consuming only 45mA active and 1mA standby, ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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MX29LV320ETXEI-70G Flash Memory Chips High-Performance Storage

... with 3.0V I/O. It has fast access time of 70ns and incorporates advanced CMOS technology. This chip is extremely low power, consuming only 45mA active and 1mA standby, ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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Flash Memory Chips - GD25Q32CNIGR for High Performance and Reliability

...: -40°C to +85°C • Package Type: SOIC 8-pin • Access Time: 70ns • Endurance: 100,000 Cycles • Data Retention: 20 Years • Density: 4Mbit x 8 • Dimension: 5.3mm x 3.8mm x 0.......

Shenzhen Sai Collie Technology Co., Ltd.
China

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W632GG8KB-12 Flash Memory Chip Storage for High-Speed Data Processing

...Memory Chip Storage for High-Speed Data Processing Product Listing: W632GG8KB-12 Flash Memory Chips The W632GG8KB-12 Flash Memory Chips provide high performance and reliable storage in a small form factor. T...

Shenzhen Sai Collie Technology Co., Ltd.
China

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S29AL016J70TFI020 Flash Memory Chips High Performance Data Storage

... with digital audio, video, and cellular applications. It features a 70ns access time, low voltage operation and a wide range of interface options. The device is capable of storing up to 2,048Kb of data. Spe...

Shenzhen Sai Collie Technology Co., Ltd.
China

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S29GL032N90TFI040 Flash Memory Chip Storage and High-Speed Data Transfer

S29GL032N90TFI040 Flash Memory Chip Storage and High-Speed Data Transfer Product Listing: S29GL032N90TFI040 Flash Memory Chips Features: - 32-megabit (4Mb x 8) NOR Flash Memory - Standard S29GL032N90TFI040 Pack...

Shenzhen Sai Collie Technology Co., Ltd.
China

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W25Q128JWSIQ Flash Memory Ic Chip 128Mb Storage High Speed Access

Product Listing: W25Q128JWSIQ Flash Memory Chips Specifications: �� Capacity: 128Mb (16Mb x 8) �� Voltage: 2.7V - 3.6V �� Interface: SPI �� Read Speed: 80MHz �� Write Speed: 40MHz �� Data retention: 20 years �� Erase/...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SRAM - Synchronous CY7C1441KV33-133AXI SDR Memory IC 36Mbit Parallel 133MHz

...Memory IC 36Mbit Parallel 133MHz Product Description Of CY7C1441KV33-133AXI The CY7C1441KV33-133AXI are 3.3 V, 1M × 36 synchronous flow-through SRAMs, respectively designed to interface with high-speed micro...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip S80KS2562GABHA020 Integrated Circuit Chip Surface Mount PSRAM IC

... expansion memory for scratchpad or buffering purposes. Specification Of S80KS2562GABHA020 Part Number: S80KS2562GABHA020 Technology: PSRAM (Pseudo SRAM) Memory Type: Volatile Product Status: Active Access T...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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S80KS5123GABHM023 Integrated Circuit Chip 24-FBGA 200MHz 512Mbit Memory Chips

...Memory Chips S80KS5123GABHM023 24-FBGA Integrated Circuit Chip 200MHz Product Description Of S80KS5123GABHM023 S80KS5123GABHM023 The host must confine the duration of transactions and allow additional initi...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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S70KS1282GABHI023 Integrated Circuit Chip HyperBus Interface Memory Chips 24-VBGA

...Memory Chips 24-VBGA Pseudo SRAM Memory Product Description Of S70KS1282GABHI023 S70KS1282GABHI023 is 128 Mb HYPERRAM™ self-refresh DRAM(PSRAM) Memory . Specification Of S70KS1282GABHI023 Parametrics S70KS1...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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S27KL0643DPBHB023 Pseudo SRAM Memory IC 24-FBGA 64Mbit Integrated Circuit Chip

...Octal) interface, the memory is more accurately described as Pseudo Static RAM (PSRAM). Specification Of S27KL0643DPBHB023 Part Number S27KL0643DPBHB023 Memory Interface SPI - Octal I/O Family KL-3 Initial A...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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512Mbit Memory IC S26KS512SDPBHA020 NOR Flash Memory Chip 24-FBGA 166MHz Parallel

512Mbit Memory IC S26KS512SDPBHA020 NOR Flash Memory Chip 24-FBGA 166MHz Parallel�� Product Description Of S26KS512SDPBHA020 S26KS512SDPBHA020 During wrapped operation, accesses start at a selected location and...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Serial NOR Flash Memory MT25QU128ABB8ESF-0AUT Integrated Circuit Chip 16-SOIC

...Memory MT25QU128ABB8ESF-0AUT Integrated Circuit Chip 16-SOIC Product Description Of MT25QU128ABB8ESF-0AUT MT25QU128ABB8ESF-0AUT is Serial NOR Flash Memory Chip, It features a high-speed SPI-compatible bus ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory Chips MT25QU128ABB1ESE-0AUT 166MHz Serial NOR Flash Memory IC 8-SOIC

Memory Chips MT25QU128ABB1ESE-0AUT 166MHz Serial NOR Flash Memory IC 8-SOIC Product Description Of MT25QU128ABB1ESE-0AUT MT25QU128ABB1ESE-0AUT features a high-speed SPI-compatible bus interface, execute-in-pla...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Integrated Circuit Chip MT29F2G08ABBGAH4-AAT:G 63-VFBGA NAND Flash Memory Chips

...Memory Chips Product Description Of MT29F2G08ABBGAH4-AAT:G MT29F2G08ABBGAH4-AAT:G is 2Gbit Parallel Asynchronous NAND Flash Memory Chips. Specification Of MT29F2G08ABBGAH4-AAT:G Part Number MT29F2G08ABBGAH4...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Flash Memory IC Integrated Circuit With Write Cycle Time Of 50µS

...n when the power is turned off. This chip is designed to operate at high speed, with a maximum access time of 50ns. It requires 2.7 V to 3.6 V of voltage supply and is designed for surface mount. This chip h...

Shenzhen Xinyuanpeng Technology Co., Ltd.
China

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Memory IC Chip MT62F1G64D8WT-031 AV XT:B Low-Power DRAM LPDDR5 64G Memory IC

Memory IC Chip MT62F1G64D8WT-031 AV XT:B Low-Power DRAM LPDDR5 64G Memory IC Product Description Of MT62F1G64D8WT-031 AV XT:B MT62F1G64D8WT-031 AV XT:B addresses these requirements with a 50% increase in data a...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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120×120×36mm Single-Axis Fiber Optic Gyroscope Random Walk Coefficient ≤0.0003 Scale Factor Repeatability ≤5

...Dynamic range/second °/s ±500 2 Bias stability (1σ, 10s) °/h ≤0.010 3 Zero bias repeatability (1σ) °/h ≤0.010 4 Repeatability over all temperatures °/h ≤0.03 5 Scale factor nonlinearity (1σ) ppm ≤10 6 Scale ...

Shenzhen FOVA Technology Co.,Ltd
Fujian,China

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Flash Memory IC Chip IS41LV8205-60J ----2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

Quick Detail: 2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Specifications: part no. IS41LV8205-60J�� Manufacturer ISSI�� supply ability ��965 datecode ��03+ package SOJ�� remark new and original stock Competitiv...

Mega Source Elec.Limited
China

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