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...Memory IC 8Gbit Parallel 25 ns 48-TSOP I Category Integrated Circuits (ICs) Memory Memory Mfr Kioxia America, Inc. Series - Part Status Active DigiKey Programmable Verified Memory Type Non-Volatile Memory Fo...
MX29GL512FHT2I Product Status Not For New Designs Memory Type Non-Volatile Memory Format FLASH Technology FLASH - NOR Memory Size 512Mb (64M x 8) Memory Interface Parallel Write Cycle Time - Word, Page 100ns Ac...
... performance and durability, this product is designed to meet the demanding requirements of IoT devices and embedded systems. One of the standout features of the eMMC5.1 product is its impressive random writ...
...Access Control Face Recognition system Time & Attendance system 8" 10" Touch/non touch available. 8inch Dynamic Face Recognition Temperature test device for Access control Facial Identification Access Contro...
ZTE SMEM memory board for ZTE ZXJ10 SPC exchange switch Contact Us Central module (CM): located at the central position in networking, and connected with peripheral switching modules (simplified as PSM ) and re...
... and monitor the attendance situation in real time. 2. USB connection supports attendance report or employee registered information download. 3. Support dynamic face detection,...
Dynamic RFID Biometric Attendance System Face Recognition Dynamic RFID Card Face Recognition Attendance Machine Waterproof Access Control System Face Recognition Attendance Machine Features ◆Exquisite Case Appe...
... Erasable and Programmable Read Only Memory with popular, easy to use features. The device is manufactured with Atmel’s reliable nonvolatile technology. Applications: •Fast Read Access Time - 120 ns •Fast By...
... fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. The SRAM provides the fast access & cycle times, ease of use and unlimited read & write endurance of a normal...
S29AL032D90TFI040 NOR Flash Memory ICs Data Storage original Performance Characteristics High performance Access times as fast as 70 ns Ultra low power consumption (typical values at 5 MHz) 200 nA Automatic...
... = 3 tCK • 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16 • Burst length (BL): 8 only • Programmable CAS latency: 7–25 • Programmable WRITE latency: 4–7 • Progr...
...Async SRAM 3.3v FEATURES • High-speed access time: 8, 10 ns • Operating Current: 50mA (typ.) • Standby Current: 700µA (typ.) • Multiple center power and ground pins for greater noise immunity • Easy memory e...
S29AL032D90TFI040 NOR Flash Memory ICs Data Storage original Performance Characteristics High performance Access times as fast as 70 ns Ultra low power consumption (typical values at 5 MHz) 200 nA Automatic...
... = 3 tCK • 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16 • Burst length (BL): 8 only • Programmable CAS latency: 7–25 • Programmable WRITE latency: 4–7 • Progr...
...Async SRAM 3.3v FEATURES • High-speed access time: 8, 10 ns • Operating Current: 50mA (typ.) • Standby Current: 700µA (typ.) • Multiple center power and ground pins for greater noise immunity • Easy memory e...
AT29C256-70PC IC 256K 32K x 8 5-volt Only CMOS Flash Memory Features Fast Read Access Time – 70 ns 5-volt Only Reprogramming Page Program Operation – Single Cycle Reprogram (Erase and Program) – Internal Addres...
... ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands ente...