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Total 3364 products for dynamic random access memory Manufacture & Suppliers

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount

Memory IC Chip MT53E1G32D2NP-053 RS WT:C 32G DRAM LPDDR4 Memory IC Surface Mount Product Description Of MT53E1G32D2NP-053 RS WT:C MT53E1G32D2NP-053 RS WT:C is a high-speed CMOS dynamic random access storage dev...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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933MHz Integrated Circuit Chip MT41K512M16VRN-107 IT:P 8Gbit Memory IC 96FBGA

... dynamic random access memory device internally configured as two 8-bank DDR3L SDRAM devices. MT41K512M16VRN-107 IT:P Although each die is tested individually within the dual-die package, some ......

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AS7C34098A-10JIN IC SRAM 4MBIT PARALLEL 44SOJ Alliance Memory, Inc.

...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C256B-15PIN IC SRAM 256KBIT PARALLEL 28DIP Alliance Memory, Inc.

... data access, low power, and simple interfacing are desired. FEATURES • Organization: 32,768 words × 8 bits • High speed – 10/12/15/20/25/35 ns address access time – 3/3/4/5/6/8 ns output enable access time ...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C1024B-12TJCN IC SRAM 1MBIT PARALLEL 32SOJ Alliance Memory, Inc.

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C1024B-12JCN IC SRAM 1MBIT PARALLEL 32SOJ Alliance Memory, Inc.

... applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5/6/7/8 ns...

Sanhuang electronics (Hong Kong) Co., Limited
China

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Integrated Circuit Chip CY15B102QN-50LHXI 50MHz FRAM Memory Chip 8-WDFN IC Chips

...advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. Specification Of CY15B102QN-50LHXI Part Number CY15B102QN-50LHXI C...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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AS7C316098A-10BIN IC SRAM 16MBIT PARALLEL 48TFBGA Alliance Memory, Inc.

...memory applications where fast data access, low power, and simple interfacing are desired. Features • AS7C1024 (5V version) • AS7C31024 (3.3V version) • Industrial and commercial temperatures • ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C256A-10TCN IC SRAM 256KBIT PAR 28TSOP I Alliance Memory, Inc.

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C256A-12JCN IC SRAM 256KBIT PARALLEL 28SOJ Alliance Memory, Inc.

...memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance’s advanced circuit design and process techniques permit 5.0V ......

Sanhuang electronics (Hong Kong) Co., Limited
China

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AS7C4096A-12JIN IC SRAM 4MBIT PARALLEL 36SOJ Alliance Memory, Inc.

... is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 524,288 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple i...

Sanhuang electronics (Hong Kong) Co., Limited
China

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M29W640FB70N6E Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory

... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...

ChongMing Group (HK) Int'l Co., Ltd
China

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AS6C4016-55ZIN IC SRAM 4MBIT PARALLEL 44TSOP II Alliance Memory, Inc.

..., high reliability CMOS technology. Its standby current is stable within the range of operating temperature. FEATURES Access time : 55 ns Low power consumption: Operating current : 30 mA(TYP.) Standby curren...

Sanhuang electronics (Hong Kong) Co., Limited
China

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M29W640GT70NA6E 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory common ic chips

... – Page Width: 4 words – Page Access: 25 ns – Random Access: 60 ns, 70 ns, 90 ns ■ Fast Program commands – 2 word/4 byte Program (without VPP=12 V) – 4 word/8 ......

ChongMing Group (HK) Int'l Co., Ltd
China

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FM24CL04B-GTR 4 - Kbit Non Volatile Memory , FRAM Serial Flash Memory Fast I2C Interface

... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ......

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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A623308M-70SF Integrated Circuit Chip 8K X 8 BIT CMOS SRAM memory IC

...: 35mA (max.) Standby: 15mA (max.) General Description The A623308 is a low operating current 65,536-bit static random access memory organized as 8,192 words by 8 bits and operates on a single 5V power suppl...

ChongMing Group (HK) Int'l Co., Ltd
China

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NOR Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount

...Memory IC S70GL02GT12FHIV10 2Gbit Parallel 120ns 64-FBGA Surface Mount Product Description Of S70GL02GT12FHIV10 S70GL02GT12FHIV10 device is fabricated on 45-nm MIRRORBIT™ process technology.S70GL02GT12FHIV10...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Memory IC Chip S70GL02GS11FHI010 2Gbit Parallel NOR Flash Memory Chip BGA-64

... on 65-nm MIRRORBIT™ process technology. The device offers a fast page access time of 25 ns with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/51...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Monolithic Flash Memory IC 64KB FM1608-120 Bytewide Fram Memory

... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memo...

Shenzhen Huahao Gaosheng Technology Co., Ltd
China

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Chips FM24C256-SE Type RAM Flash Memory IC 256kb Fram Serial Memory

... - 256KB FRAM SERIAL MEMORY Quick Detail: 256Kb FRAM Serial Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access mem...

Shenzhen Huahao Gaosheng Technology Co., Ltd
China

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Dynamic Random Access Memory

Total 3364 products for dynamic random access memory Manufacture & Suppliers