| Sign In | Join Free | My burrillandco.com |
|
... Flash Memory Chip Features: - 256Mb (32M x 8) - Extended Temperature Range - 4.5V ~ 3.6V Operation - Single Power Supply - 50MHz Clock Frequency - 5V Tolerant I/O for Standard Mode - 0.18um Process Technolo...
... Flash Memory Chip Features: - 256Mb (32M x 8) - Extended Temperature Range - 4.5V ~ 3.6V Operation - Single Power Supply - 50MHz Clock Frequency - 5V Tolerant I/O for Standard Mode - 0.18um Process Technolo...
...Endurance: 10,000 erase/program cycles per sector • Data Retention: 40 years • Security: Hardware and Software Data Protection Why buy from us >>> Fast / Safely / ......
Product Listing: M25P16-VMW6TG TR Flash Memory Chips Product Parameters: • Capacity: 16Mbit • Organization: 2M x 8 • Voltage Supply: 1.8V, 2.5V, 3.3V • Write/Erase Cycles: 1,000,000 • Data Retention: 20 years •...
...MX66L1G45GMI-10G Flash Memory Chips Features: - High-density memory storage with 1 Gb (1,000,000,000 bits) of memory - Low power consumption - Fast read and write performance - Serial Peripheral Interface (S...
Product Listing: MX25L3233FM1I-08G Flash Memory Chip Features: • Capacity: 8GB • Voltage: 2.7V to 3.6V • Supply Current: Active: 40mA; Standby: 0.1mA • Write/Erase Cycles: 100K • Read Speed: 80MHz • Operating T...
..., ST, MUY, OT Note 1: 100 kHz for VCC < 2.5V GENERAL DESCRIPTIONS The Microchip Technology Inc. 24XX02(1) is a 2-Kbit Electrically Erasable PROM....
Atmel Flash Memory Chip AT24C16C-SSHM-T EEPROM 16KB 8 bit 1MHz Description The Atmel® AT24C16C provides 16,384 bits of Serial Electrically Erasable and Programmable Read-Only Memory (EEPROM) organized as 2,048 ...
Atmel AT24C02D-SSHM-T Flash Memory Chip Generally use Programmable Read-Only Memory Description The Atmel® AT24C01D/02D provides 1,024/2,048 bits of Serial Electrically Erasable and Programmable Read-Only Memor...
M24C02-WMN6TP SOIC-8 Chip Flash Memory Chip EEPROMs-Serial I2C Interface M24C02 Description: The M24C01(C02) is a 1(2)-Kbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 128 (25...
M29W640GT70NA6E 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory common ic chips Feature Supply Voltage VCC = 2.7 to 3.6 V for Program/Erase/Read VPP =12 V for Fast Program (optional) Asynchrono...
...Flash FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • High Speed Clock Frequency – Up to 80 MHz • Superior Reliability – ...
M29W640FB Programming Ic Chips 64 Mbit (8Mb x8 or 4Mb x16 , Page , Boot Block ) 3V Supply Flash Memory Features summary Supply Voltage VCC = 2.7V to 3.6V for Program, Erase, Read VPP =12 V for Fast Progra...
4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory AT29C040A Features Fast Read Access Time 90 ns 5-volt Only Reprogramming Sector Program Operation Single Cycle Reprogram (Erase and Progra...
... Temperature: -50°C - +80°C. USB Service Voltage: 4.5V-5.5V. Storage Lifetime: More than 10 years (Use A-class chip, can be erased repeatedly for 100,0000 times). Operating System: Win98/ME/2000/XP/...
... injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF512/010/020/040 devices write (Program or Erase)...
...S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically imp...
... design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160xC writes (Program or Erase) with a 2.7-3.6V power supply. These d...
... The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit data bus. Individually-erasable memory blocks are optimally sized for code and data storage. Eight 4 ...
...S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically imp...