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...Memory IC Chip 32Mbit Parallel NOR Flash Memory IC TSOP-48 Product Description Of S29GL032N90TFI030 S29GL032N90TFI030 - 32Mbit Parallel NOR Flash Memory IC, TSOP-48 S29GL032N90TFI030 is 3.0-Volt single-powe...
... functionality High Performance: 133MHz clock speed with 266/532MHz equivalent Dual/Quad SPI Endurance: Minimum 100K program-erase cycles per sector Data Retention: Over 20 years Low Power Operation:...
...Programming IC Chips 256K 32K X 8 5 Volt Only Cmos Flash Memory AT29C256 256K (32K x 8) 5-volt Only Flash Memory AT29C256 Features • Fast Read Access Time – 70 ns • 5-volt Only Reprogramming • Page Program O...
..., Erase and Program X1, X2 and X4 Multi I/O, QPI, DTR Support High reliability with 100K cycling and 20 Year-retention 1 Overview ......
...Flash Memory Description: The Am29F800B is an 8 Mbit, 5.0 volt-only Flashmemory organized as 1,048,576 bytes or 524,288words. The device is offered in 44-pin SO and 48-pinTSOP packages. The word-wide data (x...
...Flash Memory Chip Product Description Of MT25QU01GBBB8E12-0AAT MT25QU01GBBB8E12-0AAT is 1Gbit Serial NOR Flash Memory Chip, high-performance, dual and quad input/output commands enable double or quadruple t...
PIC12F615 MCU Chips SOP8 PIC12F615-ISN 8 Bit Flash Programmable Memory Chip Device Program Memory Data Memory Self Read/ Self Write I/O 10-bit A/D (ch) Comparators ECCP Timers 8/16-bit Voltage Range Flash (word...
... non-volatile memory technology and is compatible with the industry-standard 80C51 instruction set and pin-out. The on-chip flash allows the program memory to be reprogrammed in-system or by a conventional n...
...Flash Memory 8Gb NAND Flash Memory supporting single-programming operation with high reliability and data retention capability. Operating voltage: 2.7V~3.6V, 200µs parallel interface. Compatible Models MT29F...
...FLASH Memory 256Mb 3V Multiple I/O Serial Flash Memory with 133MHz clock frequency and 120us access time Key Features SPI-compatible serial bus interface Single and double transfer rate (STR/DTR) operation 1...
... Flash memory device. High-performance, dual and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Specification Of MT25QL02GCBB8E12-0AUT Part Numb...
... with a corresponding random access time of 110 ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation,...
... a cost-effective solution for applications requiring highdensity solid-state storage. Specification Of MT29F4G08ABAFAH4-IT:F Part Number: MT29F4G08ABAFAH4-IT:F Memory Interface: Parallel Random read: 25µs P...
...Flash Memory IC MT28EW256ABA1LPC-0SIT Integrated Circuit Chip 64-LBGA Product Description Of MT28EW256ABA1LPC-0SIT MT28EW256ABA1LPC-0SIT is an asynchronous, uniform block, parallel NOR Flash memory device. ...
Memory IC Chip GD25B256DFIGY 3.3V Uniform Sector Dual And Quad Serial Flash Memory Product Description Of GD25B256DFIGY GD25B256DFIGY is 3.3V Uniform Sector Dual and Quad Serial Flash. It features a serial per...
... random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in...
... access time as fast as 90 ns. S29GL01GS10FHI010 feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one...
... with current consumption as low as 1µA for power-down. W25Q32JVSSIQ array is organized into 16,384 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in g...
...offered in 3.3v vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64Byte) page and an erase...
... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memo...