| Sign In | Join Free | My burrillandco.com |
|
..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V C...
... is the perfect fit for use in high-temperature and harsh environment applications. Specification Of IMBG65R022M1H Part Number: IMBG65R022M1H Vds - Drain-Source Breakdown Voltage: 650 V Transistor Polarity: ...
... MOSFET Transistors. Specification Of IMZ120R090M1H Part Number IMZ120R090M1H Product Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Cont...
... (D3PAK) package. Specification Of MSC360SMA120S Part Number: MSC360SMA120S Technology: SiC Package / Case: TO-268 Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Rds On - Drain-S...
...Channel Transistors TO-247-4 Silicon Carbide Product Description Of MSC750SMA170B4 MSC750SMA170B4 is N-Channel Single FETs MOSFETs Transistors, package is TO-247-4, Through Hole. Specification Of MSC750SMA1...
... enabling increased power density and minimized conduction losses. Specification Of IPL60R225CFD7AUMA1 Part Number IPL60R225CFD7AUMA1 Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V...
...Channel NTMFD5C470NLT1G Power MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specifi...
...Channel Transistors NTMFS005N10MCLT1G Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET – Power, Single N-Channel Transistors. Specificatio...
...channel SiC power MOSFET TO-263-8 Integrated Circuit Chip Product Description Of SCT4045DW7HRTL SCT4045DW7HRTL is 750V 31A(Tc) 93W Automotive Grade N-channel SiC power MOSFET Transistors, package is TO-263-...
...Channel Transistors TO-247-3 Silicon Carbide Product Description Of TW060N120C,S1F TW060N120C,S1F is Silicon Carbide N-Channel MOS Transistors, package is TO-247-3. Specification Of TW060N120C,S1F Part Numbe...
...Channel 153W Transistors Through Hole Product Description Of SCT20N120AG SCT20N120AG is N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. ...
... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs ......
...Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON),...
...Channel 600V Enhancement Mode Power Transistor Product Description Of IGLR60R190D1XUMA1 IGLR60R190D1XUMA1 is N-Channel 600V Enhancement Mode Power Transistor. Specification Of IGLR60R190D1XUMA1 Product Statu...
...Channel CoolGaN Power Transistor 8-LDFN Surface Mount Product Description Of IGLD60R190D1AUMA1 IGLD60R190D1AUMA1 is N-Channel CoolGaN power transistor,the package is 8-LDFN surface mount. Specification Of IG...
... adjustable height 3. Large screen ,super visual experience, colorful high brighteness and long life span. Professional cooling channel design , ensure fast cooling of the screen. 4. Fast installation/ Front...
... and high technology, INOVI's DIY plastic shower draines supply flexible assembly method to various places. You can freely choose the length of the floor drain according to the actual usage needs and perfect...
... mall, , the training platform, passengers, airport terminals, a subway station channel and other public places, can also be used as a cleaner in the large electronics factory, for large area ground assembly...
Steel grating, also known as steel grid or bar grating, is a versatile and robust flooring solution designed for industrial, commercial, and architectural applications. Made from high-quality carbon or stainles...