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N-Channel PowerTrench P-Channel QFET® MOSFET NTD2955T4G MOSFET Power Electronics P-Channel DPAK -60 V -12 A NVD SVD Automotive -60 V, -12 A, 135 mΩ Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
N-Channel PowerTrench FDC86244 MOSFET Power Electronics N-Channel Shielded Gate 150 V 2.3 A 144 m FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Dra...
N-Channel PowerTrench FDS8896 MOSFET Power Electronics N-Channel PowerTrench 30V 15A 6.0m FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) ...
N-Channel PowerTrench FDS8884 MOSFET Power Electronics N-Channel PowerTrench 30V 8.5A DC DC converters FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous...
FDMC6679AZ Dual-Channel N-Channel Enhancement Mode MOSFET Power Electronics for High Efficiency Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @...
NTMFS4C027NT1G N-Channel 30V 0.2A (TDS) MOSFET Power Electronics 5-DFN Package Single N-Channel 30 V 52 A Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25C 16.4A (Ta), 52A (Tc) Drive Vo...
..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V C...
... is the perfect fit for use in high-temperature and harsh environment applications. Specification Of IMBG65R022M1H Part Number: IMBG65R022M1H Vds - Drain-Source Breakdown Voltage: 650 V Transistor Polarity: ...
... MOSFET Transistors. Specification Of IMZ120R090M1H Part Number IMZ120R090M1H Product Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1200 V Current - Cont...
...Channel Silicon Carbide MOSFETs TO-247-3 Single FETs Product Description Of IMW65R057M1H IMW65R057M1H is 650 V 35A (Tc) 133W (Tc) N-Channel MOSFETs Transistors, Through Hole, Optimized switching behavior at...
... (D3PAK) package. Specification Of MSC360SMA120S Part Number: MSC360SMA120S Technology: SiC Package / Case: TO-268 Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 1.2 kV Rds On - Drain-S...
...Channel Transistors TO-247-4 Silicon Carbide Product Description Of MSC750SMA170B4 MSC750SMA170B4 is N-Channel Single FETs MOSFETs Transistors, package is TO-247-4, Through Hole. Specification Of MSC750SMA1...
... enabling increased power density and minimized conduction losses. Specification Of IPL60R225CFD7AUMA1 Part Number IPL60R225CFD7AUMA1 Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V...
...Channel NTMFD5C470NLT1G Power MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specifi...
...Channel Transistors NTMFS005N10MCLT1G Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET – Power, Single N-Channel Transistors. Specificatio...
...channel SiC power MOSFET TO-263-8 Integrated Circuit Chip Product Description Of SCT4045DW7HRTL SCT4045DW7HRTL is 750V 31A(Tc) 93W Automotive Grade N-channel SiC power MOSFET Transistors, package is TO-263-...
...Channel Transistors TO-247-3 Silicon Carbide Product Description Of TW060N120C,S1F TW060N120C,S1F is Silicon Carbide N-Channel MOS Transistors, package is TO-247-3. Specification Of TW060N120C,S1F Part Numbe...
...Channel 153W Transistors Through Hole Product Description Of SCT20N120AG SCT20N120AG is N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. ...
... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs ......
...Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON),...