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Fs 1 Pedal Switch

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Total 985 products for fs 1 pedal switch Manufacture & Suppliers

Power IGBT transistor HXY MOSFET IKW50N65H5-HXY with 650V voltage and 100A collector current rating

... (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche ene...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Powerful HXY MOSFET RGT00TS65DGC13-HXY IGBT with TO247 package and 650 volt collector emitter voltage

... (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche en...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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IGBT Transistor HXY MOSFET BIDW50N65T-HXY Featuring Reduced Conduction Losses for Motor Drives and UPS

... losses, improving switching speed, and increasing avalanche energy capability. It is suitable for applications such as UPS, motor drives, boost converters, and portable power stations.Product ......

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Durable HXY MOSFET NGTB40N120FL3WG-HXY IGBT module with 441 watt power dissipation and TO247 package type

...Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Trench and Field Stop Technology Based IGBT HXY MOSFET FGH40T120SMD-F155-HXY for Energy Management

...reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling.Product Attributes Br...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET IXYH55N120C4-HXY with trench and field stop technology

...reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for applications such as motor drives, PTC, and OBC.Product Attributes Brand: HUAXUANYANG Origin: ......

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET RGS00TS65DHRC11-HXY with trench and field stop technology

... (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction loss, improving switching characteristics, and increasing avalanche en...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Power Semiconductor HXY MOSFET IGW40T120FKSA1-HXY with TO247 Package and 160A Pulsed Collector Current

...reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications requiring high reliability and efficient power handling.Product Attributes Br...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Power Device HXY MOSFET IXYH75N65C3H1-HXY IGBT with Trench Field Stop Technology and RoHS Compliance

...reducing conduction loss, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations. The d...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

Verified Supplier

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High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance

...Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improving switching characteristics, and increasing ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

Verified Supplier

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Power electronics component HXY MOSFET IRG8P50N120KD-EPBF-HXY IGBT designed for motor drives and PTC

...reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as PTC, motor drives, and On-Board Chargers (OBC).Product Attributes Bra...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Insulated Gate Bipolar Transistor HXY MOSFET DGTD65T50S1PT-HXY with Halogen Free and RoHS Compliance

... enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and por...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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1200V 150A IGBT half bridge module JIAENSEMI GL150HF120T1SZ1 ideal for AC DC servo drive amplifiers

Product Overview The JIAEN GL150HF120T1SZ1 is a 1200V, 150A Trench FS IGBT half-bridge module designed for general inverter and soft switching applications. It offers lower losses and higher energy efficiency, ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Durable JSCJ MCF600N120S2E3 IGBT module ideal for motor drivers solar inverters and UPS applications

...advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage. It is designed for ease of use in drives and inverters, providing high reliability, high short cir...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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power conversion module JSCJ MCF450N120S2E3 for solar inverter motor driver and UPS applications

... Saturation Voltage for ease of use in drives and inverters. It boasts high short circuit capability, low switching loss, and high reliability. This module is suitable for applications such as Solar Inverter...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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High voltage IGBT device JSCJ CGR75N120F2KAD offering fast soft recovery diode and low Vce saturation voltage

... Saturation Voltage (Vce(sat)) and a positive temperature coefficient, making it suitable for parallel applications. Key features include low switching loss, fast and soft recovery freewheeling diode, and go...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

Verified Supplier

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Power semiconductor JSCJ CGWT40N120F2KAD IGBT with TO-247 package and positive temperature coefficient

...-generation Trench and Field Stop (FS) structure. It offers a 1200V breakdown voltage, low Vce(sat), and a positive temperature coefficient, leading to low switching losses and good EMI behavior. Designed fo...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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High current power module JSCJ MCF450N170L2E3 suitable for static var generators and inverter drives

...JSCJ's advanced Trench and FS (Field Stop) IGBT technology, offers very low Collector-Emitter Saturation Voltage, making it easy to use in drives and inverters. Its key advantages include high short circuit ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

Verified Supplier

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High current IGBT module JSCJ MCF600N170L2E3 ideal for motor drivers and high power converter systems

... module features advanced Trench and FS (Field Stop) IGBT technology, offering very low Collector-Emitter Saturation Voltage for efficient use in drives and inverters. It boasts high short circuit capability...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

Verified Supplier

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650V Silicon Trench Gate MIRACLE POWER MIQ50T065DFS IGBT for Charging Piles and Power Supply Systems

Product Overview The MIQ50T065DFS is a Silicon Trench FS IGBT from Miracle Technology Co., Ltd. featuring low switching losses, a positive temperature coefficient, and a 650V Trench Gate/Field Stop Process. It ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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