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Gate Bipolar Transistor

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Total 29443 products for gate bipolar transistor Manufacture & Suppliers

STGB10NC60KDT4 IGBT Power Transistor 600V 20A 65W N Channel For Motor Drives

...Gate Bipolar Transistor Applications High frequency motor controls SMPS and PFC in both hard switch and resonant topologies Motor drives Specifications Product Attribute Attribute Value Product Category: IGB...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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600V 96A 330W IGBT Power Transistor IRGP4063DPBF For Welding Converters

...Gate Bipolar Transistor Applications •uninterruptible power supplies •welding converters •converters with high switching frequency Specifications Product Attribute Attribute Value Package / Case: TO-247-3 Mo...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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Multifunctional Power Transistor And IGBT High Voltage 1200V 40A

Product Description: High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power capacity. It is designed to suppor...

Reasunos Semiconductor Technology Co., Ltd.
Guangdong,China

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Durable Industrial High Current IGBT , Energy Storage Insulated Gate Transistor

... current density and faster switching speed. It has a current density of 400A/c㎡ and a switching speed of 60KHz. The high power bipolar transistor is widely used in OBC, charging piles, welding machines, swi...

Reasunos Semiconductor Technology Co., Ltd.
Guangdong,China

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IXGA20N250HV IGBT Transistor Module 2500V 30A 150W Surface Mount TO-263HV

...Mount TO-263HV IXYS IXGA20N250HV High Voltage IGBT IXYS IXGA20N250HV High Voltage IGBT (Insulated Gate Bipolar Transistor) provides a square Reverse Bias Safe Operating Area (RBSOA) and 10µs short circuit wi...

HongKong Wei Ya Hua Electronic Technology Co.,Limited
China

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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264

... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low ...

HongKong Wei Ya Hua Electronic Technology Co.,Limited
China

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PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor

...gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bi...

ChongMing Group (HK) Int'l Co., Ltd
China

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GE DS200IIBDG1ADA IGBT Gate Driver Board DS200 Series Gas Turbine Card DS200IIBDG1A

...Gate Driver Board DS200 Series Gas Turbine Card in stock now Description GE DS200IIBDG1ADA has three major functions in terms of the greater overall drive assembly, including current feedback isolation, isol...

Joyoung International Trading Co.,Ltd
Fujian,China

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GE DS200IIBDG1AEA IGBT Gate Driver Board 330mm x 200mm

...Gate Driver Board Product Details: The GE DS200IIBDG1AEA is an IGBT (Insulated Gate Bipolar Transistor) Driver Board designed for drive control systems, specifically GE’s Mark V Series. As a revised version ...

Sumset International Trading Co.,Ltd
Fujian,China

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GE DS200IIBDG1ADA IGBT Gate Driver Board 330mm x 200mm Mark V

...Gate Driver Board Product Details: The GE DS200IIBDG1ADA is an IGBT (Insulated Gate Bipolar Transistor) Driver Board designed for drive control systems, specifically GE’s Mark V Series. As a revised version ...

Sumset International Trading Co.,Ltd
Fujian,China

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CA3140AMZ IC Chip BiMOS Operational Amplifier with MOSFET Input/Bipolar Output

...voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. The CA3140A and CA3140 BiMOS operational amplifiers feature gate protected MOSFET (PMOS) transistors in the input c...

ChongMing Group (HK) Int'l Co., Ltd
China

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IXGA20N250HV IGBT Transistors 2500V 30A 150W Surface Mount TO-263HV Package

IXGA20N250HV IGBT Transistors 2500V 30A 150W Surface Mount TO-263HV Package Product Description Of IXGA20N250HV IXGA20N250HV high Voltage IGBT (Insulated Gate Bipolar Transistor) provides a square Reverse Bias ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T...

Angel Technology Electronics Co
Hongkong,China

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ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W Surface Mount Manufacturer: Diodes Incorporated Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Ca...

Wisdtech Technology Co.,Limited
Guangdong,China

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MMUN2214LT1G Bipolar junction Diode Transistor Pre Biased 100mA 50V BRT NPN IC

... Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN IC PRODUCT DESCRIPTION Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN PRODUCT PROPERTIES Manufacturer: onsemi Product Category: Bipolar Transistors - P...

Hong Kong Jia Li Xin Technology Limited
China

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TC74VHC11FT TRIPLE 3-INPUT AND GATE Power Mosfet Transistor low cost audio amplifier

... achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer output, which pro...

Anterwell Technology Ltd.
Guangdong,China

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Transistor d1047 For Audio Power Amplifier Module Transistor d1047 b817 d1047 Transistor Price Original Mosfet Amplifier 2SD1047

...) technology. The resulting transistor shows good gain linearity behaviour. Features - High breakdown voltage VCEO = 140 V - Typical ft = 20 MHz - Fully characterized at 125 oC Product Category: Bipolar Tran...

Shenzhen Quanyuantong Electronics Co., Ltd.

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2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

...: TO-3P-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V ......

Wisdtech Technology Co.,Limited
Guangdong,China

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2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole Manufacturer: Toshiba Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: Through Hole Package / Case: TO-3P-3...

Wisdtech Technology Co.,Limited
Guangdong,China

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S9014 Bipolar (BJT) Transistor NPN 45V 100mA 150MHz 200mW Surface Mount SOT-23

CN3903 36V/3.0A 500KHz 0.925VFB Synchronous DCM Converter Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single Bipolar Transistors Mfr Shenzhen Slkormicro Semicon Co., Ltd. Series - Part St...

Wisdtech Technology Co.,Limited
Guangdong,China

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