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Total 33262 products for gate bipolar transistor Manufacture & Suppliers

High current insulated gate bipolar transistor HXY MOSFET IXGH50N120C3-HXY with 1200V voltage rating

...IXGH50N120C3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, l...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET SPT40N120F1AT8TL HXY designed for UPS and inverter

... coefficient in VCESAT, low EMI, low gate charge, and low saturation voltage. This device is suitable for UPS, EV-Charger, Solar String Inverter, and Energy Storage Inverter applications.......

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Insulated Gate Bipolar Transistor HXY MOSFET IXYH40N120C3-HXY with Low Saturation Voltage and EMI

... Overview The IXYH40N120C3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCES...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET AOK40B65HQ2 with low EMI and high temperature tolerance

... is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in Vcesat, low EMI, low ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications

Product Overview The APT75GP120B2G is a 1200V, 75A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features low gate charge, low saturation voltage (Vce(sat)), and easy paralle...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Insulated Gate Bipolar Transistor HXY MOSFET IXXX160N65B4-HXY 650V 160A TO247P Package RoHS Compliant Device

... The IXXX160N65B4 is a 650V, 160A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCE...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET IXGH40N120B2D1-HXY for solar inverters and energy storage systems

...IXGH40N120B2D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT,...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET IGW40N120H3-HXY for UPS EV charger and solar inverter

... Overview The IGW40N120H3 is an Insulated Gate Bipolar Transistor (IGBT) designed for high-performance applications. It features easy paralleling capability due to a positive temperature coefficient in VCESA...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver

LTV-356T-D Power Isolator IC Industry-Leading Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output ......

Shenzhen Sai Collie Technology Co., Ltd.
China

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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT 600V 22A 156W TO220AB Features �� Low VCE (on) Non Punch Through IGBT Technology. �� Low Diode VF. �� 10��s Short Circuit C...

ChongMing Group (HK) Int'l Co., Ltd
China

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DS200IPCSG2A GE Insulated Gate Bipolar Transistor P3 Snubeer Board DIN-rail Mounting Turbine Control System Series

DS200IPCSG2A GE Insulated Gate Bipolar Transistor P3 Snubeer Board DIN-rail Mounting Turbine Control System Series Product Details: Brand Name GE Model DS200IPCSG2A Condition ......

Joyoung International Trading Co.,Ltd
Fujian,China

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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT 600V 22A 156W TO220AB Features �� Low VCE (on) Non Punch Through IGBT Technology. �� Low Diode VF. �� 10��s Short Circuit C...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Suppl...

Guangzhou Topfast Technology Co., Ltd.
Guangdong,China

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ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE

Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time info...

Wuhan Sean Automation Equipment Co.,Ltd
China

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insulated gate bipolar transistor Infineon IRGP4066DPBF with low switching losses and ultrafast diode

Product Overview The IRGP4066DPbF and IRGP4066D-EPbF are n-channel Insulated Gate Bipolar Transistors (IGBTs) featuring ultrafast soft recovery diodes. Designed with low VCE(ON) Trench IGBT Technology, these de...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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High current capacity HXY MOSFET IKY75N120CH3XKSA1-HXY insulated gate bipolar transistor in TO247P4L package

Product Overview The IKY75N120CH3XKSA1 is an Insulated Gate Bipolar Transistor (IGBT) from HUAXUANYANG HXY ELECTRONICS CO.,LTD. It features high current capability, low saturation voltage, and low switching los...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET AOK60B65H2AL with advanced trench and field stop technology

Product Overview The AOK60B65H2AL is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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insulated gate bipolar transistor HXY MOSFET IXYH55N120C4-HXY with trench and field stop technology

Product Overview The IXYH55N120C4 is an Insulated Gate Bipolar Transistor (IGBT) manufactured using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction ...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Insulated Gate Bipolar Transistor HXY MOSFET IRG7PH46UD-EP-HXY with 1200V Voltage and 40A Current

Product Overview The IRG7PH46UD-EP is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction lo...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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Durable Insulated Gate Bipolar Transistor onsemi NGTB50N120FL2WG with 1200 Volt Rating and Pb Free Device Certification

Product Overview This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, providing superior performance in demanding switching applications with low...

Hefei Purple Horn E-Commerce Co., Ltd.
Anhui,China

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