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TDA2030A LINEAR INTEGRATED CIRCUIT 18W HI-FI AUDIO AMPLIFIER AND 35W DRIVER DESCRIPTION The UTC TDA2030A is a monolithic IC intended for use as low frequency class AB amplifier. With Vs=max=44V it is particular...
... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Absolute Maximum Rat...
...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Absolute Maximum Rat...
...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
Integrated Circuit Chip NFAM2065L4BT Power Driver Modules Through Hole Product Description Of NFAM2065L4BT NFAM2065L4BT is a fully−integrated inverter power module consisting of an independent High side gate dr...
MOSFET 30V.PCH POWER TRENCH MOSFET Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOIC-8 Tr...
MOSFET 30V.PCH POWER TRENCH MOSFET Product Attribute Attribute Value Select Attribute Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOIC-8 Tr...
IPP65R190CFD7XKSA1 Infineon MOSFET HIGH POWER NEW TO-220-3 IPP65R190CFD7 IPP65R190CFD Manufacturer: Infineon Product Category: MOSFET Technology: Si Installation style: Through Hole Package/Box: TO-220-3 Transi...
120V Boot, 4A Peak, High FrequencyHigh-side And Low-side Driver Integrated Circuit IC Chip The SGM48211 is a half-bridge MOSFET driver with4A peak source and sink output current capability,which makes it possib...
... and special power MOS structure, making it suitable for various applications requiring high voltage and ultra-high voltage, such as LED driver,...
Product Description: The Low Voltage MOSFET is a pivotal component in modern electronic design, offering a range of benefits that are essential for high-efficiency and reliable applications. By utilizing a soph...
...Circuit Chip SCT040H65G3AG SiC MOSFETs H²PAK-7 Wide Bandgap Transistors Product Description Of SCT040H65G3AG SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK...
... temperature rang is -55°C to 175°C, Very low RDS(on) over the entire temperature range. Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Re...
... On) 18V Rds On (Max) @ Id, Vgs 34mOhm @ 38.3A, 18V Vgs(th) (Max) @ Id 5.7V @ 11mA Gate Charge (Qg) (Max)...
Integrated Circuit Chip MSC090SMA070S 700V SiC MOSFET Transistors TO-268-3 Product Description Of MSC090SMA070S MSC090SMA070S is N-Channel Power MOSFET Transistors, Fast switching speed due to low internal gat...
... Of MSC035SMA070B4 Part Number: MSC035SMA070B4 Id - Continuous Drain Current: 77 A Rds On - Drain-Source Resistance: 44 mOhms Vgs - Gate-Source Voltage: - 10 V, +...
..., 8-pin, surface mount molded package. Specification Of QH8MA4TCR Part Number QH8MA4TCR Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 15V Power - ......
... low gate and output charge, combined with very low on-state resistance and small package size, make OptiMOS™ 25V the best choice for demanding ......
... m, 300 A Transistors. Specification Of FDBL9403-F085T6 Part Number FDBL9403-F085T6 Qg - Gate Charge: 108 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipatio...