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IRFB3206PBF Field Effect Transistor Mosfet Single N-Channel IR 60V Product Range 60V Single N-Channel IR MOSFET™ in a TO-220AB package App ......
Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management Power MOSFET types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed...
SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET ......
AO4407A P-Channel Enhancement Mode Field Effect Transistor The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable...
...hall use the open loop hall direct testing principle to test direct current, alternating current and pulse current, the primary current is electrical isolation with secondary output signal. The output value ...
...Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Test...
...Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Test...
...Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Test...
...Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Test...
TK13A60D(STA4,Q,M) TOSHIBA Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS ...
IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω...
N Channel Power Mosfet Transistor , 2SK3561 MOS Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK3561 Switching Regulator Applications Low drain-source ON resist...
HBC1000S SeriesCurrent Transducer Hall Current Sensor for PV Inverter Detection with 0 to 1000A Operating Current Feature * Closed- loop * Supply voltage: DC +-15~24V * Capable measurement of currents: DC, AC,p...
...Hall effect BLDC motor driver board Application guidelines 1. Please confirm that the voltage and power parameters of the motor not exceed the range as specified. 2. This BLDC motor driver applicable to hall...
...Hall Effect Speed/Proximity Sensor Description: Non-contact Hall effect sensor designed for speed or proximity measurements on critical turbomachinery applications such as steam, gas and hydro turbines, comp...
...Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON a...
...Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON a...
... a rotating magnetic field around the conductor. This magnetic field is collected by a magnetic core made of magnetosensitive material and concentrated in the air gap of the core. The Hall Effect Device (HED...
NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's prop...
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DM...