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Total 24227 products for hall effect transistor Manufacture & Suppliers

AP85N03NF Power Field Effect Transistor MOSFET SMD N Channel With Load Switch

AP85N03NF Power field effect Transistor MOSFET SMD N-Channel with Load switch Description The AP85N03NF uses advanced trench technology to provide excellent R DS(ON) low ......

Shenzhen Canyi Technology Co., Ltd.
Guangdong

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IRFS3207Z Power Field Effect Transistor Mosfet Chip 75V 170A For Circuit Protection

...Effect Transistor Chip Circuit Protection 75V 170A Description Power MOSFT 75V 170A 4.1mOhm Single N-Channel HEXFET Power MOSFET in a D2-Pak package Specifications Product Attribute Attribute Value Manufactu...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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BLDC Motors Field Effect Transistor Power Mosfet IPB017N10N5 Infineon

Product Range IPB017N10N5 Infineon Field Effect Transistor Semiconductors Power Mosfet Transistors MOSFET N-channel 600 V, 0.175 Ohm typ 18 A MDmesh DM2 Power MOSFET in D2PAK package App Characteristics ......

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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SMD / SMT Field Effect Transistor Chip Circuit Protection IRF8736TRPBF 30V 18A

...Effect Transistor Chip Circuit protection IRF8736TRPBF 30V 18A Product range MOSFET MOSFT 30V 18A 4.8mOhm 17nC Basic data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoH...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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Acrel AHKC-EKB Hall Current Transformer Sensor Effetto Hall Dc 4-20mA Open Loop Dc Hall Effect Sensor 800A

AHKC-EKB hall sensor Open-loop hall current sensor Measuring ��AC, DC, pulse and other complex current signals Features ��Small package ��Low power consumption ��Extended measuring range Application ��AC variable sp...

Jiangsu Acrel Electrical Manufacturing Co., LTD.
Jiangsu,China

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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY3404 Mos Field Effect Transistor SOT-23 Plastic Encapsulated

SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management

Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management Power MOSFET types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Field Effect Transistor Ao3402 Power Mosfet N-Channel 30v 4a Sot23 Fets Single Marking A2

Product range Field Effect Transistor Ao3401a Power Mosfet P-Channel 30v 4a Sot23 Fets Single The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltag...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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IRFB3206PBF Single Field Effect Transistor 60V N Channel Mosfet IR

IRFB3206PBF Field Effect Transistor Mosfet Single N-Channel IR 60V Product Range 60V Single N-Channel IR MOSFET™ in a TO-220AB package App ......

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management

Vertical Structure Mos Field Effect Transistor DC/DC Converter Power Management Power MOSFET types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY3404 Mos Field Effect Transistor SOT-23 Plastic Encapsulated

SOT-23 Plastic-Encapsulate MOSFETS HXY3404 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) <32 mΩ VGS =4.5V RDS(on) <40 mΩ VGS =2.5V FEATURE TrenchFET ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AO4407A P-CHANNEL 12A MOSFET Original in stock 10PCS Field Effect Transistor 4407A

AO4407A P-Channel Enhancement Mode Field Effect Transistor The AO4407A uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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hall effect sensor of open loop sensor hall ipn 5-10000A for dc ac and pc measurement

...hall use the open loop hall direct testing principle to test direct current, alternating current and pulse current, the primary current is electrical isolation with secondary output signal. The output value ...

Tianjin Grewin Technology Co., Ltd
Tianjin

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Test...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Test...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Test...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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