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...High-current High-reliability Low-resistance Radial choke inductors Radial lead fixed inductors Wire-wound Construction Polyolefin Shrink Tubing Excellent Environmental Characteristics High Reliability High ...
...High Voltage Power Isolator IC High Speed Switching Operating Voltage Product Description: The TLP781(GB,F) Power Isolator IC is a high-efficiency, low-saturation, optically-coupled isolator designed to prov...
...High Current Flat Wire SPI07 Series SIZE LENGTH WIDTH HEIGHT PACKAGE (mm) (mm) (mm) 1005 10.2 10.2 4.5 SMT 1006 10.2 10.2 6.4 SMT Feature Core material: NiZn Flat wire power inductor; Magnetically shielded w...
Double Power 3phase AC CB Class 63a 125a Automatic Transfer Switch changeover switch General The ATS is suitable for emergency power supply systems of AC50 or 60Hz and rated voltage 400V. It is featured with fi...
...need or question, Welcome contact us to get more details. High quality different with general part. 1000PCS for MOQ, packing for cartons. T/T payment FOB term or discussed. Wholesale and retail can be consid...
...-Source Voltage (Vdss): 100 V Continuous Drain Current (Id): 4.5 A Rds On (Max) @ Id, Vgs: 2.4 mOhms @ 1.2 A, 10 V Gate Charge (Qg) @ Vgs: 15 nC @ 10 V Input ......
IRG4PC50UPBF MOSFET Power Electronics High-Performance High-Power Switching for Robust Applications Parameters: Drain-Source Voltage: 500V Continuous Drain Current: 43A Drain-Source On-Resistance: 0.032 ...
IRFP32N50KPBF MOSFET Power Electronics High-Performance High-Reliability Switching Solution IRFP32N50KPBF MOSFET Features: - N-Channel - Maximum Drain Source Voltage: 500V - Maximum Drain Current: 32A - RDS (on...
BSZ0909NS MOSFET Power Electronics High Performance High-Efficiency Switching Transistors Features: - N-Channel MOSFET - Voltage: 100V - Drain Current: 6A - Rds(on): 0.36ohm - Package: TO-252 - Maximum Power Di...
... Specifications: -Drain-Source Voltage (Vdss): 30V -Continuous Drain Current (Id): 10A -On-Resistance (Rds): 0.0015 Ohm -Gate-Source Voltage (Vgs): 20V -Gate Charge (Qg): 28nC -......
NTGS5120PT1G MOSFET Power Electronics SOT-23-6 High Performance Low On Resistance High Speed Switching FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous...
FDN5618P MOSFET Power Electronics TO-236-3 Transistor High Performance Low On Resistance High Speed Switching FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Con...
FDPF12N60NZ MOSFET Power Electronics High Frequency High Efficiency Switch Mode for Automotive and Industrial Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuo...
FDPF18N20FT MOSFET Power Electronics – High Performance Switching Low On-Resistance and High Temperature Operation Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Volt...
FDN342P MOSFET Power Electronics: High Power Low Loss High Efficiency Switching Solutions Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On...
FDT86244 MOSFET Power Electronics High-Speed Switching and High-Power Conversion FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150 V Current - Continuous Drain (Id) @ 25°C 2....
FQP55N10 MOSFET Power Electronics High-Performance High-Efficiency Switching for Heavy-Duty Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continu...
NTMFS5C604NLT1G MOSFET Power Electronics High Efficiency High Frequency Switching and Low Heat Dissipation Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 38A (Ta) Drive Voltage (Max ...
NDS0605 N-Channel MOSFET Power Electronics for High-Efficiency High-Speed Switching Applications FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain...
...operating at high frequencies and providing reliable and efficient power conversion. It features low on-resistance, low gate charge, low gate-source capacitance, and fast switching speeds. This device is ide...