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Total 10000 products for high power voltage Manufacture & Suppliers

IGBT Power Module MG150J1BS11 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1JS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1JS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG150J1ZS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

... input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30µs (max) (IC = 150A) trr = 0.15µs (max) (IF = 150A) [1]Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG150J2YS40 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...input impedance [1]Includes a complete half bridge in one package. [1]Enhancement-mode [1]High speed : tf = 0.30 µs (max) (IC = 150 A) trr = 0.15 µs (max) (IF = 150 A) [1]Low saturation voltage : VCE (sat) =...

Mega Source Elec.Limited
China

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IGBT Power Module MG150Q1JS43 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS43 Manufacturer TOSHIBA supply ability ....

Mega Source Elec.Limited
China

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IGBT Power Module MG150Q1JS65H - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Max) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65H Manufacturer TOSHIBA supply ability ...

Mega Source Elec.Limited
China

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IGBT Power Module MG150Q1JS65HA - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...) trr = 0.5µs (Max) z Low saturation voltage : VCE (sat) = 4.0V (Max) z Enhancement-mode z The electrodes are isolated from case. Specifications: part no. MG150Q1JS65HA Manufacturer TOSHIBA supply ability .....

Mega Source Elec.Limited
China

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IGBT Power Module MG150Q2YS51 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...Module Silicon N Channel IGBT Description: High Power Switching Applications Motor Control Applications Applications: [1]High input impedance [1]High speed : tf = 0.3µs (Max) @Inductive Load [1]Low saturatio...

Mega Source Elec.Limited
China

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IGBT Power Module MG200H1AL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG200H1FL1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG200H1FL1A - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High Power Switching Applications Motor Control Applications Applications: z The electrodes are isolated from case. z High input impedance z Includes a complete half bridge in one package. z Enhancement-mode...

Mega Source Elec.Limited
China

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IGBT Power Module MG200H1JK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG200H2CK1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG200H2YS1 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J1ZS50 - TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J2YS1 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J2YS11- TOSHIBA - TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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IGBT Power Module MG200J2YS40 - TOSHIBA -TOSHIBA GTR Module Silicon N Channel IGBT

...High input impedance z Includes a complete half bridge in one package. z Enhancement-mode z High Speed : tf = 0.30µs (Max) (IC = 200A) trr = 0.15µs (Max) (IF = 200A) z Low saturation voltage : VCE (sat) = 2....

Mega Source Elec.Limited
China

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