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... noise characteristics. Its ultra-small SOT-323 package makes it ideal for high-density surface mount applications, primarily used in VHF and UHF low-noise amplifiers.Product Attributes Brand: (Guo Xin Jia P...
...transistor manufactured by Shenzhen Guoxin Jiapin Semiconductor Co., Ltd. Utilizing a planar process, it offers high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. P...
... bipolar transistor manufactured by Guo Xin Jia Pin SEMICONDUTOR. It features high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. Packaged in a SOT-23/SC-59 surface-...
... bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It offers high power gain and low noise characteristics. Its ultra-small SOT-323 package makes it ideal for high-density surface mo...
Product Overview The MMBT5401 is a PNP bipolar transistor, serving as a complementary part to the MMBT5551. It is designed for medium power amplification and switching applications, housed in a surface-mount SO...
... noise characteristics. Featuring an ultra-small SOT-323 package, it is ideal for high-density surface mount installations and is primarily used as an oscillator in radar modules above 4GHz.Product Attribute...
... NPN silicon epitaxial bipolar process. Packaged in SOT-323, it is suitable for high-density surface mount applications and is primarily used in high-frequency, low-noise amplifiers for VHF, UHF, and...
...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise characteristics, and a large dynamic range. Utilizing an ultra-small SOT-323 package, it is particula...
...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise characteristics, and a large dynamic range. Its ultra-small SOT-323 package makes it ideal for high-d...
... bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It offers high power gain, low noise figure, wide dynamic range, and ideal current characteristics. Packaged in a SOT-23 surface-mo...
...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. Utilizing a planar NPN silicon epitaxial process, it offers high power gain, a low noise figure, a large dynamic range, and ideal current ch...
... bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packaged in an SC59 surf...
...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise characteristics, and a large dynamic range. Utilizing an ultra-small SOT-323 package, it is particula...
...transistor manufactured by Shenzhen Guoxin Jiapin Semiconductor Co., Ltd. Utilizing a planar NPN silicon epitaxial bipolar process, it offers high power gain, low noise figure, large dynamic range, and ideal...
...epitaxial planar bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It offers high power gain, low noise figure, wide dynamic range, and excellent current characteristics. Packaged in...
...transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It utilizes a planar process and offers high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packa...
... bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise figure, wide dynamic range, and ideal current characteristics. Packaged in an SC-59 surface-...
... bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packaged in an SOT-89 su...
Product Overview The ISC BD677 is a Silicon NPN Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a collector-emitter breakdown vo...
...transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characteristics and suitability for oscillators up to 12 GHz. This device provides c...