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...Transistors designed for general-purpose applications. These transistors are manufactured using epitaxial planar technology, ensuring reliable performance. Product Attributes Brand: SLKORMicro Technology: Si...
...transistors, known as Bias Resistor Transistors (BRTs), integrates a single transistor with a monolithic bias network of two resistors (base and base-emitter) into a single SOT-23 surface-mount package. This...
...Transistors (BRT) with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) co...
...Transistors (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mono...
... to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications). VDS (V)...
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
... Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inv...
...Transistor / Logic Mosfet Switch Surface Mount Package N Channel Transistor Description The 18N20X uses advanced Plane technology to provide excellent Rds(on), low gate charge and operation with gate voltage...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
...Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use ...
... N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable for u...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
...Transistor / Logic Mosfet Switch Surface Mount Package N Channel Transistor Description The 18N20X uses advanced Plane technology to provide excellent Rds(on), low gate charge and operation with gate voltage...
...Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use ...
... N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.This device is suitable for u...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
... bipolar transistor manufactured using a planar process. It features high power gain, a low noise figure, a large dynamic range, and ideal current characteristics. Packaged in an SOT-89 surface-mount package...
... bipolar transistor designed using a planar process. It offers high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. Packaged in an SOT-89 surface-mount package, this ...
...epitaxial bipolar transistor designed using a planar process. It offers high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. Packaged in an SOT-23 surface-mount packa...