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...transistor designed for high-speed switching applications. It features a small flat package, high-speed switching time, and a low collector-emitter saturation voltage. This transistor is complementary to the...
...Transistor designed for low-noise and high-gain applications. It offers high power gain and is ideal for use as a low-noise amplifier in VHF, UHF, and CATV band applications. This transistor is housed in a S...
...transistors designed for high current applications with a maximum rating of 1 A and low voltage capability up to 80 V. These transistors are suitable for general-purpose use and offer reliable performance in...
...transistor designed for general-purpose applications. It is complementary to the S9014 and offers a DC current gain (hFE) ranging from 200 to 1000. This transistor is suitable for use in common emitter confi...
...Transistor designed for various electronic applications. It features low equivalent on-resistance and is complementary to the FMMT591. This transistor is suitable for use in circuits requiring efficient swit...
... / 50mA, complementing the 2SD1781. This transistor is suitable for use in common emitter configurations and exhibits a transition frequency (fT) of 150 MHz at VCE=5V, IC=50mA, f=100MHz. Product Attributes T...
...Transistors Product Overview The Nexperia PDTC123Y series comprises NPN Resistor-Equipped Transistors (RETs) designed for general-purpose switching and amplification applications. These transistors feature b...
...Transistor (Built-In Resistors) The AD-DTC143T series are NPN digital transistors featuring built-in bias resistors. This integration eliminates the need for external input resistors, simplifying circuit con...
.... The internal thin-film resistors offer complete isolation, allowing for negative input biasing and minimizing parasitic effects. Designed for ease of use, these...
...transistors with built-in resistors, offering features beyond regular digital transistors. They are designed with a low saturation voltage, typically VCE(sat) = 40mV at IC / IB = 50mA / 2.5mA, making them id...
...typically VCE(sat) = 40mV at IC/IB=50mA/2.5mA), making them ideal for muting circuits. These transistors also support high current levels up to IC=600mA. They are designed for use in ordinary electronic equi...
...Transistor (Bias Resistor Built-in) Product Overview The DTA044E series is a PNP digital transistor featuring built-in biasing resistors (R1 = R2 = 47k). This integration simplifies circuit design by elimina...
...transistors featuring built-in bias resistors, simplifying inverter circuit configurations without external components. These transistors utilize thin-film resistors with complete isolation for negative inpu...
... with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of...
...Transistors Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with...
...Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fa...
2SC5589 Toshiba Mosfet Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications....
FGH20N60SFD IGBT Power Transistors 600V 20A Field Stop 165W Through Hole Description Using Novel Field Stop IGBT Technology, ON Semiconductors new series of Field Stop IGBTs offer the optimum performance for A...
TOSHIBA TK39A60W Power Switching Transistor 38.8A 600V 50W 4100pF Silicon N-Channel MOS Applications Switching Voltage Regulators Description Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial pr...
... U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate thres...