Total 2730 products for how to use transistor Manufacture & Suppliers

• PNP Transistor ElecSuper S8550 in SOT23 Package 300mW Power Dissipation for Electronic Applications

  

  ...transistor in a SOT-23 plastic-encapsulated package, designed as a complementary component to the S8050. It offers a power dissipation of 300mW, ensuring high stability and reliability for various electronic...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• Durable PNP transistor High Diode S8550 in SOT23 package designed for multiple electronic circuit uses

  

  Product Overview The S8550 is a complementary PNP transistor to the S8050, designed for general-purpose applications. It features a SOT-23 plastic-encapsulated package, offering reliable performance for various...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• NPN bipolar RF transistor Infineon BF776H6327XTSA1 designed for low noise amplifier applications

  

  ...-automotive applications including WLAN, WiMax, UWB, Bluetooth, GPS, SDARs, DAB, LNB, UMTS/LTE, and ISM bands. The transistor comes in an easy-to-use standard package with visible leads and is Pb-free (RoHS ...

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  Anhui,China

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• Low noise silicon NPN RF bipolar transistor Infineon BFR340FH6327XTSA1 designed for oscillator applications up to 35 GHz

  

  ...transistor from Infineon's third-generation RF bipolar transistor family. It is designed for oscillator applications up to 3.5 GHz, offering low current and high breakdown voltage characteristics. This devic...

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  Anhui,China

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• SiGe C technology RF transistor Infineon BFP620H7764XTSA1 for wireless communication applications

  

  ...transistor utilizing SiGe:C technology. As part of Infineon's sixth-generation transistor family, it offers excellent linearity and collector design, making it suitable for a wide range of wireless applicati...

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  Anhui,China

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• Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf

  

  ..., and low-voltage silicon NPN RF bipolar transistor from Infineon's third-generation RF bipolar transistor family. It is designed for low current amplifiers and offers cost competitiveness with ease of use. ...

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  Anhui,China

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• Surface mount silicon npn rf bipolar transistor Infineon BFP640H6327 with 42 GHz transition frequency

  

  ... characteristics at low currents make it suitable for energy-efficient designs up to 8 GHz. This device provides cost competitiveness without compromising ease of use.Product Attributes Brand:...

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• SiGe C Technology RF Bipolar Transistor Infineon BFP640ESDH6327 for Industrial Wireless Applications

  

  ...transistor from Infineon's sixth generation transistor family, utilizing SiGe:C technology. It offers high RF gain, low noise figure, and excellent ESD robustness, making it suitable for a wide range of wire...

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• Silicon NPN Power Transistor ISC BU406 with High Voltage Capability and Peak Collector Current of 10A

  

  ... speed (tf= 750ns Max), and low saturation voltage (VCE(sat)= 1.0V Max @ IC= 5A). This transistor is specifically designed for use in horizontal deflection output stages of TVs and CRTs.Product Attributes Br...

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  Anhui,China

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• Silicon NPN Power Transistor ISC BUX98A Designed for High Voltage and Fast Switching Applications

  

  ... robust device performance and reliable operation. This transistor is suitable for use in high frequency and efficiency converters, as well as linear and switching industrial equipment.Product Attributes Bra...

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• SiGe C Technology Infineon BFP 650F H6327 NPN RF Bipolar Transistor for Oscillator and RF Applications

  

  ...transistor built on SiGe:C technology, belonging to Infineon's sixth-generation transistor family. It offers a high transition frequency (fT) of 42 GHz and excellent linearity, making it suitable for oscilla...

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  Anhui,China

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• Silicon PNP Darlington Transistor ISC BD678 Featuring 60V Collector Emitter Breakdown Voltage and 750 Gain

  

  ... Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a Collector-Emitter Breakdown Voltage of -60V and a minimum DC Current Gain (hFE) of 75...

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• Silicon bipolar transistor Infineon BFR 181W H6327 low noise figure designed for broadband rf amplifier

  

  ...transistor designed for high-gain broadband amplifiers. It is suitable for collector currents ranging from 0.5 mA to 12 mA, offering a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of...

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• NPN Silicon Planar Transistor MCC FMMT618 TP with 0.5 Amp Base Current and RoHS Compliant Lead Free Finish

  

  ...Transistor The FMMT618 is a high-performance NPN silicon planar transistor designed for various applications. It features a continuous base current of 0.5 A and a continuous collector current of 2.5 A, with ...

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• Nexperia BC847BW115 transistor offering 200 minimum gain and 45 volt VCEO in compact SOT323 SC70 package

  

  ... transistors designed for a wide range of switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering three di...

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• Compact surface mount PNP transistor Nexperia BC856B215 for switching and amplification applications

  

  ... package, offering low current (max. 100 mA) and low voltage (max. 65 V) capabilities. They are suitable for general-purpose use where reliable performance in a small form factor is...

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• Silicon NPN Triple Diffused Type Transistor Minos 2SC5198 Designed for 100W Power Amplifier and Audio Frequency

  

  ... of 140V (min). This transistor is recommended for use in 100-W high-fidelity audio frequency amplifier output stages. Note: Continuous operation under heavy loads, such as high temperature, ......

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  Anhui,China

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• Power transistor Minos 2SC5200 designed for operation in high fidelity audio amplifier output stages

  

  ...audio frequency amplifiers. It offers a high collector voltage of 230V (min) and is complementary to the 2SA1943 transistor. While operating within absolute maximum ratings, continuous use under heavy loads ...

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• PNP Transistor Nexperia PMBS3906 215 in Surface Mount SOT23 Package for General Purpose Applications

  

  ...transistor designed for versatile switching and amplification applications. Housed in a compact SOT23 (TO-236AB) surface-mounted plastic package, this transistor offers a collector current capability of 100 ...

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• 300V NPN transistor PANJIT MMBTA42 R1 00001 with 250mW power dissipation and RoHS 2 0 compliant design

  

  ... high voltage transistor designed for various applications requiring a 300V breakdown voltage and a power dissipation of 250mW. It features a lead-free design compliant with EU RoHS 2.0 and uses a green mold...

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