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Product Overview The ISC BD677 is a Silicon NPN Darlington Power Transistor designed for use as output devices in complementary general-purpose amplifier applications. It offers a collector-emitter breakdown vo...
...transistor designed for high-frequency applications. It features a grounded emitter (SIEGET) structure, offering low noise characteristics and suitability for oscillators up to 12 GHz. This device provides c...
...3DD5023P is a high breakdown voltage NPN bipolar transistor designed for low-frequency applications, specifically for the horizontal deflection output circuit in color televisions. Manufactured using advance...
...)), making it ideal for use as a driver in DC/DC converters and actuators. Its robust performance and reliable operation are further enhanced by minimum lot-to-lot variations.Product ......
Product Overview The JTD5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the JTD501, offering reliable performance in its intended use cases.P...
Product Overview The MJE2955T is a PNP power transistor designed for audio power amplification. It offers robust performance with specific electrical characteristics and absolute maximum ratings crucial for rel...
Product Overview The DTC114YCA is an NPN transistor from Niuhang Specification Electronic Co. Ltd, designed for various electronic applications. It features a SOT-23 package and is suitable for general-purpose ...
... planar design high voltage transistor. It features a collector-emitter voltage of 160V and a continuous collector current of 600mA. This AEC-Q101 qualified component is lead-free in compliance with EU RoHS ...
...are available in a SOT-23 package. These devices comply with EU RoHS 2.0 and are manufactured using green molding compound, making them an environmentally conscious choice for various electronic circuits.Pro...
...-emitter voltage of 40V and a continuous collector current of 200mA. This device is compliant with EU RoHS 2011/65/EU directive and uses a green molding compound as per IEC61249 Std. (Halogen Free).Product A...
...a continuous collector current of 200mA. This lead-free component complies with EU RoHS 2.0 and uses a green molding compound, making it an environmentally conscious choice.Product Attributes Brand: Panjit I...
Product Overview The B772M is a PNP Plastic-Encapsulated Transistor designed for low-speed switching applications. It features a TO-252 package and offers a robust set of electrical characteristics and maximum ...
...MMBT2907A is a PNP general-purpose amplifier and switching transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, with a useful dynamic...
Product Overview The 3356 is a silicon-based microwave bipolar transistor primarily used in high-frequency electronic amplifier circuits. It offers a low noise figure and a high cutoff frequency, making it suit...
... and other uses requiring unique site and control change requirements, being AEC-Q101 qualified and PPAP capable. These devices are RoHS compliant and Halogen ......
... The LBC817 series are dual general-purpose NPN/PNP transistors designed for various electronic applications. They are available in different gain options and are suitable for use in general-purpose switchin...
Product Overview The L2SA1774QT1G Series are general-purpose PNP silicon transistors designed for various applications. They offer reliable performance with key electrical characteristics and are available in S...
... characteristics suitable for general use.Product Attributes Brand: LESHAN RADIO COMPANY, LTD. Material: Silicon Certifications: RoHS compliant, AEC-Q101 Qualified and PPAP ......
...high frequency, low-noise NPN silicon epitaxial bipolar transistor. It offers high power gain and low noise characteristics, making it ideal for high-density surface mount applications. Primarily used in VHF...
... is a complementary pair of NPN (4401-type) and PNP (4403-type) silicon epitaxial planar transistors. These devices are constructed using an epitaxial planar die and are ideally suited for low power amplific...