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Product Details General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: MirrorBit technology - that stores two data bits in each memory array transistor ...
Product Details Functional Description The CY7C1353 is a 3.3V 256K by 18 Synchronous-Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insert...
Product Details GENERAL DESCRIPTION The W25Q80DV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well b...
Product Details GENERAL DESCRIPTION The W25Q80 (8M-bit), W25Q16 (16M-bit), and W25Q32 (32M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. The 25Q series of...
Product Details GENERAL DESCRIPTION The W25Q128BV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well ...
Product Details DDR2 SDRAM MT47H256M4 32 Meg x 4 x 8 banks MT47H128M8 16 Meg x 8 x 8 banks MT47H64M16 8 Meg x 16 x 8 banks Features VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V JEDEC-standard 1.8V I/O (SSTL_18...
Product Details Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the inser...
Product Details Functional Description[1] The CY7C1355C/CY7C1357C is a 3.3V, 256K x 36/512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write opera...
Product Details Functional Description The CY7C138AV/144AV/006AV/007AV and CY7C139AV/145AV/ 016AV/017AV are low-power CMOS 4K, 8K, 16K, and 32K x8/9 dual-port static RAMs. Various arbitration schemes are includ...
Product Details FEATURES Standard Voltage: VDD and VDDQ = 1.5V 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V High speed data transfer rates with system frequ...
Product Details General Description BR24T256-W is a serial EEPROM of I2C BUS Interface Method Features Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (S...
Product Details General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: MirrorBit technology - that stores two data bits in each memory array transistor ...
Product Details Functional Description The Cypress CY14B101LA/CY14B101NA is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 128 K bytes of 8 bits each or 64 ...
Product Details Introduction This document provides information about the Intel StrataFlash Embedded Memory (P30) device and describes its features, operation, and specifications. Product Features High perfo...
Product Details [adesto] Description The AT45DB041E is a 1.65V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage ...
Product Details FEATURES Standard Voltage: VDD and VDDQ = 1.5V 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V High speed data transfer rates with system frequ...
Product Details Functional Description [1] The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Features Pin- and function-compatible with CY7C199C High speed tAA = 10 n...
Product Details General Description BR24G04-3 is a serial EEPROM of I2C BUS Interface Method Features Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (SC...
Product Details FEATURES Standard Voltage: VDD and VDDQ = 1.5V 0.075V Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V High speed data transfer rates with system frequency up to 933 MHz 8 internal ...
Product Details DESCRIPTION The DS1345 1024k NV SRAMs are 1,048,576-bit, fully static, NV SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitr...