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Product Details Functional Description The CY7C1460AV33/CY7C1462AV33/CY7C1464AV33 are 3.3V, 1M x 36/2M x 18/512K x72 Synchronous pipelined burst SRAMs with No Bus Latencyâ„¢ (NoBLâ„¢) logic, respectively. They are ...
Product Details General Description BR24Gxxx-3A is a serial EEPROM of I2C BUS Interface Method Features â– All controls available by 2 ports of serial clock(SCL) and serial data(SDA) â– Other devices than EEPROM ...
Product Details General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: â– MirrorBit technology - that stores two data bits in each memory array transistor ...
Product Details FUNCTIONAL DESCRIPTION The AS7C256 is a high performance CMOS 262,144-bit Static Random Access Memory (SRAM) organized as 32,768 words × 8 bits. It is designed for memory applications where fast...
Product Details GENERAL DESCRIPTION The W25Q128BV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well ...
Product Details DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Features • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC-standard 1.8V I/O (SSTL_18...
Product Details FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequ...
Product Details Functional Description The CY7C1049 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Features • High speed — tAA = 15 ns • Low active power — 1210 mW (max.) • Low CMOS...
Product Details Functional description The AS7C256A is a 5.0V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized as 32,768 words × 8 bits. It is designed for memory applicatio...
Product Details Functional Description The CY7C144AV and CY7C006AV are low-power CMOS 8K/16K x 8 dual-port static RAMs. Various arbitration schemes are included on the devices to handle situations when multiple...
Product Details Features • Pin- and function-compatible with CY7C1019CV33 • High speed — tAA = 10 ns • Low Active Power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power — ISB2 = 3 mA • 2.0V Data retention • Autom...
Product Details Functional Description The CY7C008/009 and CY7C018/019 are low-power CMOS 64K, 128K x 8/9 dual-port static RAMs. Various arbitration schemes are included on the devices to handle situations when...
Product Details General Description The S29CD-G Flash Family is a burst mode, Dual Boot, Simultaneous Read/Write family of Flash Memory with VersatileI/Oâ„¢ manufactured on 170 nm Process Technology. Distinctive ...
Product Details Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory application...
Product Details Functional description The AS7C1024B is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 131,072 words x 8 bits. It is designed for memory application...
Product Details DESCRIPTION The DS1270 16M Nonvolatile SRAMs are 16,777,216-bit, fully static nonvolatile SRAMs organized as 2,097,152 words by 8 bits. Each NV SRAM has a self-contained lithium energy source an...
Product Details Functional description The AS7C256A is a 5.0V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized as 32,768 words × 8 bits. It is designed for memory applicatio...
Product Details DESCRIPTION These electrically erasable programmable memory (EEPROM) devices are fabricated with STMicroelectronics’ High Endurance, Double Polysilicon, CMOS technology. This guarantees an endur...
Product Details [Duracell] Introduction Duracell pioneered the alkaline-manganese dioxide electrochemical system nearly 40 years ago. In the 1960-1970 decade, this battery system rapidly became the popular choi...
Product Details FEATURES � Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V � Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V � High speed data transfer rates with system frequ...