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...Power Electronics The IRLMS1503TRPBF is a MOSFET Power Electronics device from Infineon Technologies. It is a N-Channel enhancement mode MOSFET that is suitable for use in a wide range of applications, inclu...
... offers low on-resistance and high current carrying capacity, making it an ideal choice for power management and conversion of high frequency circuits. Features: • Low On-Resistance • High Current Carrying C...
...Power Electronics Product Description: This MOSFET Power Electronics from IRF7862TRPBF is designed to provide high performance and reliable switching solutions for various applications. It features low on-re...
... gate charge, low gate capacitance and high-speed switching, this device is ideal for a wide range of applications such as motor control, power converters and motor drives. Product Parameters: • Drain-Source...
Product Overview The IKA15N65F5 is a high-speed 5 FAST IGBT from Infineon's TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack IGBT offers best-in-class efficiency...
Product Overview The FGHL50T65MQD is a 650 V, 50 A Field Stop Trench IGBT featuring 4th generation mid-speed IGBT technology and full current rated copak Diode technology. It offers high current capability, low...
...Power Electronics in Automotive and Computing Equipment *The welding wire is manufactured from 6N high - purity aluminum material, with a certain proportion of trace elements added. *It is widely applied in ...
...fast switching speed. It is designed to minimize power loss in a variety of applications, including power converters, motor drives, and power management. Features: -Low On-Resistance: RDS(on) ≤ 0.85mΩ (Vgs=1...
... superior switching performance and low on-state resistance. It is designed to meet the requirements of high power applications such as DC-DC converters, motor controllers and power management systems. The d...
...Power MOSFET for Power Electronics Applications Product Description: The IRFP4229PBF N-Channel Power MOSFET is a rugged device designed to efficiently handle high-power applications. It features excellent sw...
... of 8.5A, a gate threshold voltage of 4V, and a maximum power dissipation of 32W. This MOSFET is ideal for use in high-power applications such as motor control, lighting, and power management. The IRFB4227PB...
2N7002WT1G MOSFET Power Electronics High-Performance Low-Voltage Switching Solutions for Your Electronic Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Curre...
FQT4N20LTF MOSFET Power Electronics SOT-223-4 Package N-Channel high energy strength electronic lamp ballasts ET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Con...
...Power Electronics for High Efficiency Applications Parameters: - Operating Voltage: -20V to -60V - Drain Current: -3A - On Resistance: 0.0045Ω - Gate Threshold Voltage: -1.6V to -2.2V - Maximum Power Dissipa...
...Power Electronics High Performance Low On Resistance Ultra Low Gate Charge Package: TO-252 Drain to Source Voltage (Vdss): 40V Gate to Source Voltage (Vgs): ±20V Continuous Drain Current (Id): 10A Power Diss...
... automotive, industrial, and consumer electronics. It features an advanced trench gate structure that provides excellent switching performance, low on-resistance, and fast switching speeds. It also has maxim...
...Power Electronics High Performance High Efficiency Low On Resistance Parameters: - Drain-Source Voltage: 100V - Continuous Drain Current: 70A - On-Resistance RDS(on): 0.02 Ohm - RDS(on) Test Voltage: 5V - Ga...
... Power Dissipation: 2.1W - Operating Temperature: -55°C to 175°C Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic components .Our branches office inclu...
...Power Electronics for Maximum Efficiency Specifications: - VDSS: 100V - ID: 40A - RDS(on): 0.0065Ω - Package: TO-247 - Transistor Polarity: N-Channel - Mounting Type: Through Hole - Technology: MOSFET - Powe...
...Power Electronics for Maximum Efficiency IRF7759L2TRPBF MOSFET Voltage: 100V Drain to Source Breakdown Voltage: 100V Continuous Drain Current: 33A Pulsed Drain Current: 166A Drain Source On-Resistance: 0.007...