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Total 38603 products for igbt structure and operation Manufacture & Suppliers

DC24V Swing Gate Operator Single / Double 400KG Gate Weight Per Leaf With Backup Battery

...gate use, gate leaf weight up to 400 Kg and width up to 3.0 m, DC motor, compact structure, smooth operation and low noise. DETAILED PRODUCT DESCRIPTION DC motor, compact structure, smooth operation and low ...

SHENZHEN SINOMATIC TECHNOLOGY CO., LIMITED
Guangdong,China

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High Performance IGBT Power Module 2270W 1mA Half Bridge Configuration

...IGBT Type - Configuration Half Bridge Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 300A Power - Max 2270W Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 300A Current - Collector Cut...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Automotive IGBT Modul High Power Converters FF1500R12IE5 Active Dual 1500.0 A IGBT5 - E5

...Motor drives Electrical Features • Tvj op = 175°C • Extended operating temperature Tvj op • Unbeatable robustness • Trench IGBT 5 • High short-circuit capability Mechanical Features • Package with CTI>400 • ...

Hontai Machinery and equipment (HK) Co. ltd
Guangdong,China

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Inverter Diode IGBT Power Module FF300R12KT4P Fieldstop IGBT4 Emitter Controlled HE Diode

IGBT-Module • Inverter diode FF300R12KT4P Fieldstop IGBT4 and Emitter Controlled HE diode TypicalApplications • High powerconverters • Motor drives • UPS systems • Wind turbines Electrical Features • Extended o...

Hontai Machinery and equipment (HK) Co. ltd
Guangdong,China

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FF100R12RT4 Motor Drives IGBT Power Module Infineon Technologies Emitter Controlled Diode

IGBT-modules FF100R12RT4 MotorDrives Infineon Technologies Emitter Controlled diode Typical Applications • High Power Converters • Motor Drives • UPS Systems Electrical Features • Extended Operation Temperature...

Hontai Machinery and equipment (HK) Co. ltd
Guangdong,China

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GDHY 0.47UF 1200VDC IGBT Snubber Capacitor

C31 0.47UF 1200VDC for power electronic equipments IGBT Snubber Absorption Capacitor Technical Parameter Reference Standards IEC61071 .GB/T17702 Operating Temperature Range -40℃~+85℃ (Max. +105℃) Capacity Range...

Guangdong Huayu Electronic Company Limited
Guangdong,China

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Resonant 2UF Bridge Rectifier Snubber Capacitor for IGBT

C31 2UF 700VDC Snubber Capacitor for Bridge Rectifier IGBT Switch Snubber Capacitor Technical Parameter Reference Standards IEC61071 .GB/T17702 Operating Temperature Range -40℃~+85℃ (Max. +105℃) Capacity Range ...

Guangdong Huayu Electronic Company Limited
Guangdong,China

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2UF WIMA MKP IGBT Snubber Capacitor Alcon KP-3C

C31 2UF 1000VDC Same As WIMA MKP Alcon KP-3C Snubber Capacitor 1000V IGBT Snubber Cpacitor Technical Parameter Reference Standards IEC61071 .GB/T17702 Operating Temperature Range -40��~+85�� (Max. +105��) Capacity...

Guangdong Huayu Electronic Company Limited
Guangdong,China

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1.5uf 1200VDC IGBT Snubber Capacitor High Voltage Film

1.5uf 1200VDC IGBT Snubber High Voltage Film Capacitor Technical Parameter Reference Standards GB/T 17702 IEC 61071 Operating Temperature Range -40��~70��, Tmax +85�� Capacity Range 0.33��F-6.0uF Rated Voltage 3000...

Guangdong Huayu Electronic Company Limited
Guangdong,China

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Silicon Carbide DF23MR12W1M1PB11BPSA1 Automotive IGBT Modules 20mW 2N-Channel

...IGBT Modules 20mW 2N-Channel Product Description Of DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 is Booster 1200 V CoolSiC™ MOSFET Module, 2 N-Channel (Dual) Transistors, Silicon Carbide (SiC) Module. Speci...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FP15R12KE3GBPSA1 1200V 25A Transistors Chassis Mount

...IGBT Modules FP15R12KE3GBPSA1 1200V 25A Transistors Chassis Mount Product Description Of FP15R12KE3GBPSA1 FP15R12KE3GBPSA1 Module features a trench/fieldstop IGBT4 and four emitter-controlled diodes with Pre...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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2N-Channel FF3MR12KM1HOSA1 Automotive IGBT Modules 1200V Mosfet Array Module

..., 15V Input Capacitance (Ciss) (Max) @ Vds: 39700pF @ 800V Package / Case: Module Technology: MOSFET (Metal Oxide) Operating Temperature(Max):...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Half Bridge FF8MR12W2M1B11BOMA1 CoolSiC MOSFET Module 1200V Automotive IGBT Modules

...IGBT Modules Product Description Of FF8MR12W2M1B11BOMA1 FF8MR12W2M1B11BOMA1 is 1200 V, 8 mΩ half-bridge module with CoolSiC™ MOSFET, NTC temperature sensor and PressFIT contact technology. Specification Of...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module

...IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module Product Description Of FF45MR12W1M1B11BOMA1 FF45MR12W1M1B11BOMA1 is Dual 1200V CoolSiC MOSFET Module, using CoolSiC ™ MOSFET, temperature d...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules F411MR12W2M1B76BOMA1 4N-Channel Half Bridge Module 1200V

..., NTC, and PressFIT Contact Technology. Specification Of F411MR12W2M1B76BOMA1 Part Number F411MR12W2M1B76BOMA1 Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Chassis Mount Package / Case Module Supp...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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IGBT Modules FF1200R17IP5PBPSA1 Trench Field Stop Half Bridge 1700V 1200A 20mW

IGBT Modules FF1200R17IP5PBPSA1 Trench Field Stop Half Bridge 1700V 1200A 20mW Product Description Of FF1200R17IP5PBPSA1 FF1200R17IP5PBPSA1 modules offer extended operating temperature, high short-circuit capab...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules MSCSM120AM03CT6LIAG Mosfet Array 1200V 805A Transistors

.... Specification Of MSCSM120AM03CT6LIAG Part Number MSCSM120AM03CT6LIAG Input Capacitance (Ciss) (Max) @ Vds 30200pF @ 1kV Power - Max 3.215kW (Tc) Operating Temperature -40°C ~ 175°C (TJ)...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Modules MSCDC100A70D1PAG Automotive IGBT Modules 700V 100A Diode Power Module

...IGBT Modules 700V 100A Diode Power Module Product Description Of MSCDC100A70D1PAG MSCDC100A70D1PAG is Silicon Carbide Schottky Diode Array, 1 Pair Series Connection 700 V 100A, Chassis Mount Module. Specifi...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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1200V Automotive IGBT Modules MSC130SM120JCU2 N-Channel Silicon Carbide SOT-227-4

...IGBT Modules MSC130SM120JCU2 N-Channel Silicon Carbide SOT-227-4 Product Description Of MSC130SM120JCU2 MSC130SM120JCU2 is a 1200V, 173A full Silicon Carbide power module. Specification Of MSC130SM120JCU2 P...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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4000Vrms Automotive IGBT Modules MSCSM120SKM11CT3AG 254A Power MOSFET Modules

...SiC) power module. Very low stray inductance, Outstanding performance at high frequency operation. Specification Of MSCSM120SKM11CT3AG Part Number MSCSM120SKM11CT3AG Product: Power MOSFET Modules Type: Buck ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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