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Igbt Structure And Operation

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Total 38603 products for igbt structure and operation Manufacture & Suppliers

STGP19NC60KD IGBT Power Module Transistors IGBTs Single

...IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 35A Current - Collector Pulsed (Icm) 75A Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A Power - Max 125W Switching Energy...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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FGPF70N33BTTU IGBT Power Module Transistors IGBTs Single

...IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 330V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 220A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 70A Power - Max 48W Switching Ener...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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IXSH30N60B IGBT Power Module Transistors IGBTs Single

... 100nC Td (on/off) @ 25°C 30ns/150ns Test Condition 480V, 30A, 4.7 Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ)...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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STGB18N40LZ-1 IGBT Power Module Transistors IGBTs Single

... Charge 29nC Td (on/off) @ 25°C 650ns/13.5µs Test Condition 300V, 10A, 5V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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IXST30N60B IGBT Power Module Transistors IGBTs Single

... 100nC Td (on/off) @ 25°C 30ns/150ns Test Condition 480V, 30A, 4.7 Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ)...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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GT10G131(TE12L,Q) IGBT Power Module Transistors IGBTs Single

... Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C 3.1µs/2µs Test Condition - Reverse Recovery Time (trr) - Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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IXGR120N60B IGBT Power Module Transistors IGBTs Single

... 350nC Td (on/off) @ 25°C 60ns/200ns Test Condition 480V, 100A, 2.4 Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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GT8G133(TE12L,Q) IGBT Power Module Transistors IGBTs Single

... Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C 1.7µs/2µs Test Condition - Reverse Recovery Time (trr) - Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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FGA50N100BNTTU IGBT Power Module Transistors IGBTs Single

...IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1000V Current - Collector (Ic) (Max) 50A Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A Power - Max 156W Sw...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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GT50J121(Q) IGBT Power Module Transistors IGBTs Single

... - Td (on/off) @ 25°C 90ns/300ns Test Condition 300V, 50A, 13 Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature 150°C (TJ)...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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IXSH25N120A IGBT Power Module Transistors IGBTs Single

... Td (on/off) @ 25°C 100ns/450ns Test Condition 960V, 25A, 18 Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ)...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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FGH30N120FTDTU IGBT Power Module Transistors IGBTs Single

... - Input Type Standard Gate Charge 208nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) 730ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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GT10J312(Q) IGBT Power Module Transistors IGBTs Single

...IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 10A Current - Collector Pulsed (Icm) 20A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 60W Switching Energy -...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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STGP14N60D IGBT Power Module Transistors IGBTs Single

... Charge - Td (on/off) @ 25°C - Test Condition 390V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr) 37ns Operating Temperature - Mounting Type Through Hole Package / Case TO...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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IXGA120N30TC IGBT Power Module Transistors IGBTs Single

... Energy - Input Type Standard Gate Charge 134nC Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package /...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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GT60N321(Q) IGBT Power Module Transistors IGBTs Single

...IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1000V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 60A Power - Max 170W Switching Energ...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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IXGA12N60BD1 IGBT Power Module Transistors IGBTs Single

...IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 24A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A Power - Max 100W Switching Energy 50...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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STGF14N60D IGBT Power Module Transistors IGBTs Single

... Charge - Td (on/off) @ 25°C - Test Condition 390V, 7A, 10 Ohm, 15V Reverse Recovery Time (trr) 37ns Operating Temperature - Mounting Type Through Hole Package / Case TO...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

Active Member

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IXGA12N60C IGBT Power Module Transistors IGBTs Single

...IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 24A Current - Collector Pulsed (Icm) 48A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A Power - Max 100W Switching Energy ...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

Active Member

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IXGA90N33TC IGBT Power Module Transistors IGBTs Single

...IGBT Type - Voltage - Collector Emitter Breakdown (Max) 330V Current - Collector (Ic) (Max) 90A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 45A Power - Max 200W Switching Energy - ...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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