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...IGBT MODULE S-SERIES AC SWITCH IGBT Module Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max...
...IGBT MODULE T1-SERIES NX TYPE DUAL IGBT Modules Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCE...
Automotive IGBT Modules RMSL202-1200 Full-Featured Structured Light 3D Camera Module Product Description Of RMSL202-1200 RMSL202-1200 is a mature, full-featured structured light 3D camera module. It has a buil...
IRG4PC40UDPBF IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar tr...
IRGP35B60PDPBF IGBT Power Module High Efficiency High Reliability Long Life Product Name: IRGP35B60PDPBF IGBT Power Module Description: This IGBT power module is designed to provide reliable and efficient opera...
...IGBT Modules IGBT MODULE NFH-SERIES HI-FREQUENCY DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Volta...
...IGBT Modules FP50R12KT4B11BPSA1 IGBT Module Trench Field Stop Module Product Description Of FP50R12KT4B11BPSA1 FP50R12KT4B11BPSA1 feature an integrated temperature sensor, high current density, and low VCE. ...
...packed with fully rated current diode. The FGHL75T65MQDTx IGBTs operate at 175°C maximum junction temperature, 650V collector to emitter voltage, and 75A collector current. These IGBTs feature positive tempe...
...IGBT Module Manufacturer: Qorvo Product Category: RF Amplifier RoHS: Details Operating Frequency: 45 MHz to 1 GHz Operating Supply Voltage: 24 V Operating Supply Current: 430 mA Gain: 23 dB NF - Noise Figure...
...IGBT 400A/c㎡ Device for Application Insulated Gate Bipolar Transistor Product Description: High Power IGBT High Power IGBT is a kind of Insulated Gate Bipolar Transistor (IGBT) which is developed to provide ...
...IGBT module Super Mini DIPIPM Version 6 6-PAC Manufacturer: Mitsubishi Electric Products: IGBT Silicon Modules Configuration: 6-Pack Maximum collector-emitter voltage VCEO: 600 V Collector-emitter saturation...
...IGBT Modules IGBT MODULES-SERIES DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1.2...
... IGBT modules Detailed Description FF900R12ME7WB11BPSA1 is 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC, PressFIT contact technology and wave structure on the base plate. ...
...IGBT MODULE IGBT MODULE T-SERIES NX TYPE DUAL Manufacturer: Mitsubishi Electric Product Category: IGBT Module Products: IGBT Silicon Modules Configuration: Dual Maximum collector-emitter voltage VCEO: 1.2 kV...
...IGBT Modules FF750R17ME7DB11BPSA1 Half Bridge Inverter IGBT Modules Product Description Of FF750R17ME7DB11BPSA1 FF750R17ME7DB11BPSA1 is IGBT Module Trench Field Stop Half Bridge Inverter 1700 V 750 A 20 mW C...
... to meet the demanding requirements of modern electronic systems. With its advanced features and reliable performance, this module offers exceptional power handling capabilities and efficient operation. Feat...
... IGBT MODULE 1.2KV 309A SEMICONDUCTOR Manufacturer: StarPower Europe AG Product Category: IGBT MODULE RoHS: Details Type: IGBT MODULE Brand: StarPower Operating Supply Voltage: 1.2 V Packaging: Standard Subc...
...IGBT Switching with High Efficiency Reliability Product Listing: IGBT Power Module, 5M160ZE64I5N • Nominal Voltage: 650V • Maximum Current: 160A • Maximum Power Dissipation: 750W • Operating Temperature: -40...
... Emitter Voltage: 600V - Maximum Collector Current: 22A - Gate Emitter Voltage: ±20V - Maximum Power Dissipation: 115W - Operating Frequency: 20kHz - Operating Temperature Range: -40°C to 125°C - Storage Tem...
... IGBTs with rugged anti−parallel diodes. Specification Of NXH450B100H4Q2F2PG Part Number NXH450B100H4Q2F2PG Gate-Emitter Leakage Current: 2 uA Pd - Power Dissipation: 959 W, 805 W Minimum Operating Temperatu...