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                    ...Memory Chips for Storage Solutions High Performance Product Description: The W971GG6KB-25 Flash Memory Chips are high-speed, low-power memory chips with a 25nm process technology. They provide a wide range o...
                    ... power consumption - Low voltage memory read operation - 100K program/erase cycles - Data retention 10 years - 256 bytes security register - 8 bytes OTP register - Hardware Data Protection Specifications: - ...
                    ... - Advanced write protection - Fast access time: 40/45ns - Endurance: up to 100,000 program and erase cycles - Data retention: up to 20 years - 8-pin SOIC package Why buy from us >>...
                    ...: -40°C to +85°C • Package Type: SOIC 8-pin • Access Time: 70ns • Endurance: 100,000 Cycles • Data Retention: 20 Years • Density: 4Mbit x 8 • Dimension: 5.3mm x 3.8mm x 0.9mm Application: • Industrial • Auto...
                    ... Flash Memory Chip Storage and High-Speed Data Transfer Product Listing: S29GL032N90TFI040 Flash Memory Chips Features: - 32-megabit (4Mb x 8) NOR Flash Memory - Standard S29GL032N90TFI040 Package - Fast acc...
                    ...Memory Chips for High Performance Storage Product Listing: M25P16-VMN6TP TR Flash Memory Chips Product Parameters: • Memory Capacity: 16 MB • Operating Voltage: 2.7V - 3.6V • Clock Frequency: 50 MHz max • Op...
                    ...Memory Chips Specifications: • Capacity: 128Mb (16Mb x 8) • Voltage: 2.7V - 3.6V • Interface: SPI • Read Speed: 80MHz • Write Speed: 40MHz • Data retention: 20 years • Erase/Program Cycles: 10,000 • Operatin...
                    ...25nm process. It has a maximum clock frequency of 104MHz, a minimum operating temperature of -40C and a maximum operating temperature of 85C. It has a data retention voltage range of 1.7V to 3.6V and an endu...
                    ...°C - Package Type: SOIC-8 - Data Transfer Rate: 133Mb/s - Pin Count: 8 - Flash Memory Organization: 16M x 8 - Endurance: 10,000 Program/Erase Cycles - Data Retention: 20 Years - Features: 4K-byte Sub-Sector ...
                    ...Memory IC 8-SOIC Product Description Of CY15V102QSN-108SXI CY15V102QSN-108SXI Provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability proble...
                    ... it suitable for surface mounting. With a write cycle time of 50µs and a data retention of 20 years with a maximum supply voltage of 3.6V, the Flash Memory IC is a great choice for those needing reliable sto...
                    ...Memory IC is an integrated circuit chip that provides reliable and cost-effective storage for data, with a memory organization of 512K X 8, packaged in SOIC-8 and supplied with a maximum voltage of 3.6V. It ...
                    ...t the data stored on it does not get erased even when the power supply is switched off. The Flash Memory IC can retain data for up to 20 years with its advanced data retention capabilities. It operates at a ...
                    ...Memory ICs are integrated circuits that provide non-volatile, low-voltage storage of data for a variety of applications. Our Flash Memory ICs offer a capacity of 4Mbit, and are ideal for use in embedded syst...
                    Memory IC Chip GD25B256DFIGY 3.3V Uniform Sector Dual And Quad Serial Flash Memory Product Description Of GD25B256DFIGY GD25B256DFIGY is 3.3V Uniform Sector Dual and Quad Serial Flash. It features a serial per...
                    ...operating temperatures, from -40°C to 125°C (TA). This Integrated Circuit Storage Device also offers superior data retention, with a 166 MHz data retention rate, and quick access time, with a non-volatile ac...
                    ...MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolat...
                    ...MEMORY Quick Detail: 256Kb FRAM Serial Memory Description: The FM24C256 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvol...
                    ... • Endurance: 10,000 Cycles • Density: 16M x 32 • VCC Power Supply: 2.7V-3.6V • Package: TSOP • Data Retention: 10 Years • Dimension: 12x20mm Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock...