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...Infineon Inside IGBT Module IGBT Inverter 1700V 3600A FZ3600R17HP4 Manufacturer: Infineon Product Type: IGBT Modules Configuration: Single Collector-emitter maximum voltage VCEO: 1.7 kV Collector-emitter sat...
Infineon IGBT Power Module BSM75GB120DN2 or BSM75GB12ODN2 BSM75GB120DN2 Product Description Manufacture: INFINEON TECHNOLOGIES Type of module: IGBT Semiconductor structure: Transistor Topology: IGBT half-bridge...
... collector current at 25 C: 300 A Gate-emitter leakage current: 400 nA Pd-power dissipation: - Package / Box: Module Minimum working temperature: - 40 C Maximum working temperature: +...
Infineon Technologies The half-bridge 34 mm 1200 V, 150 A dual IGBT modules with fast TRENCHSTOP IGBT4 1200 V dual IGBT module The half-bridge 34 mm 1200 V, 150 A dual IGBT modules with fast TRENCHSTOP™ IGBT4 a...
... IGBT Module Infineon Technologies 1.EasyPACK Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC 2.Typical Applications Airconditions Motor Drives Servo Drives UPS Systems 3.Electrical F...
...IGBT Modules FF450R08A03P2 Power Driver Module IGBT Half Bridge 750V 450A Module Description of FF450R08A03P2 The FF450R08A03P2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle app...
FF150R12RT4 IGBT Modules Infineon Technologies 1.Feature description Extended operating temperature Tvj op Low switching loss Low VCEsat Tvj op = ......
...-gate bipolar transistor (IGBT) power module. This device is designed for high-frequency switching applications and provides a high blocking voltage of 1300V, a low on-state voltage drop of ......
FF800R17KP4_B2 IGBT Modules IGBT 1700V 800A Manufacturer: Infineon Product Category: IGBT Modules Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1.7 kV Collector-Emitter ...
FF450R12ME4 IGBT Modules IGBT 1200V 450A FF450R12ME4 Manufacturer: Infineon Product Category: IGBT Modules RoHS: Details Product: IGBT Silicon Modules Configuration: Dual Collector- Emitter Voltage VCEO Max: 1....
... temperature Tvj op • High short-circuit capability • Unbeatable robustness • Tvj op = 175°C • Trench IGBT 5 Mechanical Features • Package with CTI>400 • High power density • High power and thermal cycling c...
..., Emitter Controlled 4 diode and NTC. Also available with Thermal Interface Material. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings. They are ...
Infineon Power Module IGBT FZ1800R12HP4 1200v 1800a Single Switch Igbt Module Soft-Switch Applications HighPowerConverters MotorDrives WindTurbines Specifications Parametrics FZ1800R12HP4_B9 Configuration...
Infineon FF50R12RT4 well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled Typical Applications • High Power Converters • Motor Drives • UPS Systems Electrical Features...
Infineon EconoDUAL3 Module FF600R17ME4 The FF600R17ME4 is an EconoDUAL3 module featuring Trench/Fieldstop IGBT4 and Emitter Controlled diode with NTC. It offers high current density, low VCEsat with a positive ...
...Igbt Module N-CH 1200V 460A IGBT Inverter IGBT Modules Applications Motor control and drives Uninterruptible Power Supplies (UPS) Specifications Product Attribute Attribute Value Manufacturer: Infineon Produ...
... base plate. Ideal for high power converters, motor drives, servo drives, UPS systems, and wind turbines.Product Attributes Brand: Infineon (implied by module type and datasheet format) Model: FF600R12ME4 Mo...
ABB FF600R12IP4: High-Power IGBT Module Technical Overview Product Clarification The FF600R12IP4 is commonly associated with high-power drive and converter systems used by ABB, but the original manufacturer is ...