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Insulated Gate Bipolar Transistor

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Total 30198 products for insulated gate bipolar transistor Manufacture & Suppliers

High Adaptable Gate Valve Cover Heating Keep Removable Insulation Jacket Alkali Free

High Adaptable Gate Valve Cover Heating Keep Removable Insulation Jacket Alkali Free To get a simple install and disassemble, removable insulation jacket is produced by factory with a high adaptable performance...

Unionfull (Insulation) Group Ltd.
Zhejiang,China

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Galvanized Steel Electric Fence Gate Cattle Plastic Spring Gate Handle

...Gate Handle Farm Fencing Accessories Manufacture Supplies The Plastic spring gate handle is made of high-quality materials The spring is contained in an insulated plastic handle for easy and stable opening a...

Shanghai Terrui International Trade Co., Ltd.
Shanghai,China

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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS

...Transistor P Channel Enhancement Mode BSP315 SIPMOS • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Drain-source breakdown voltage V(BR)DSS = ƒ(Tj ) Transient thermal impedance Zth JA ...

Anterwell Technology Ltd.
Guangdong,China

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2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( PIE-MOSV )

...Transistor Silicon N Channel MOS Type (PIE-MOSV) ►Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) ►High forward transfer admittance: |Yfs| = 0.4 S (typ.) ►Low leakage current: IDSS = 100 µA (max) (VDS...

Anterwell Technology Ltd.
Guangdong,China

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AON7403 Power Mosfet P Channel Enhancement Mode Field Effect Transistor

...25V gate rating. This device is suitable for use as a load switch or in PWM applications. AON7403 and AON7403L are electrically identical. -RoHS Compliant -AON7403L is ......

Anterwell Technology Ltd.
Guangdong,China

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2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

... * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ≤ 1.0MΩ 60 V...

Anterwell Technology Ltd.
Guangdong,China

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WST3078 High Current Transistor , Power Switch Transistor High Cell Density

WST3078 N&P-Ch MOSFET Description The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power s...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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60N03PIT 30V N Channel Mosfet Transistor , High Power Transistor

18N20X 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen ......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Halogen Free Mosfet Power Transistor For DC-DC Converters / Motor Control

AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excelle...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Performance Mosfet Power Transistor Low Gate Charge RoHS Compliant

AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent therm...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP50N10D Dual Mosfet Switch / 50A 100V TO-252 High Power Transistor

... Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This devic...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection

6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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9A 600V SCR SOT23 MCR10-8 Crystal Thyristor Amplifiier Transistor

...9A 600V Crystal thyristor SCR SMD SOT-23 Amplifiier Transistor 3-Pin Technical Attributes Description Value Max Processing Temp 260 °C Maximum Gate Trigger Current 0.05 mA Maximum Gate Trigger Voltage 0.8 V ...

DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong,China

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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection

6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance

...gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen ......

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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SI7272DP-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays

SI7272DP-T1-GE3 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25��C 25A Rds On (Max) @ Id, Vgs 9....

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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SI4288DY-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays

SI4288DY-T1-GE3 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25��C 9.2A Rds On (Max) @ Id, Vgs 2...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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BUK9K29-100E,115 Field Effect Transistor Transistors FETs MOSFETs Arrays

BUK9K29-100E,115 Specifications Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25��C 30A Rds On (Max) @ Id, Vgs ...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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FDS8958A_F085 Field Effect Transistor Transistors FETs MOSFETs Arrays

FDS8958A_F085 Specifications Part Status Active FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25��C 7A, 5A Rds On (Max) @ Id, Vgs 28 m...

KZ TECHNOLOGY (HONGKONG) LIMITED
China

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