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...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit P...
...: EIS Part Number: EIS-IRLML6346TRPBF Manufacturer Part Number: IRLML6346TRPBF Manufacturer / Brand: IR (International Rectifier) Brief Description: HEXFET Power MOSFET Quantity Available: 7073 Pieces Unit P...
...MOSFET & Schottky Diode Description: The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management ap...
FDMS7660AS N-Channel 30V 82A Synchronous Rectified MOSFET 8-PQFN Package for High Efficiency Power Electronics Applications rain to Source Voltage (Vdss) 30 V Current - Continuous Drain (......
GS5M 5A Standard Rectifiers International Rectifier Diode Standard International Rectifier Diode GS5M 5A 1000V Surface Mount Diode GS5A~GS5M SMC Datasheet.pdf Features: The plastic package ......
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...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b...
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit...
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized de...
... Avalanche Rated Ease of Paralleling Simple Drive Requirements Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc...
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized de...
...MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unip...
...IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These...
...MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefi...
...MOSFET with Ultra-Low 1.7mandOmega; RDS(on) TO-220 Package 100% Avalanche Tested Fast Switching High Power Density andamp; Industrial-Grade Reliability andnbsp; Features Advanced Process Technology Ultra Low...
... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient ...
... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico...
.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr...
IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET...
...internal shunt resistor, designed for low voltage motor drive applications. Its compact, high-performance AC motor-driver design simplifies integration in electric vehicles, portable power tools, and light i...