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...Transistor Complementary to KTB817 for 60w High Power Amplifier Application CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage VEBO ...
...Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low ...
IGBT Trench Field Stop 80A FGHL75T65MQDTL4 Transistors TO-247-4 Package Product Description Of FGHL75T65MQDTL4 FGHL75T65MQDTL4 features a robust and costeffective Ultra Field Stop Trench construction, and prov...
...Transistor IC 4N35 Single Channel 6 Pin DIP Common Logic Families DEVICE TYPES Part No. CTR % Min. 4N25 20 4N26 20 4N27 10 4N28 10 4N35 100 4N36 100 4N37 100 4N38 10 FEATURES • Interfaces with Common Logic F...
BUK95/9608-55A TrenchMOS logic level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product a...
...Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...
...Transistor S8050 SOT-23 Complimentary to S8550 Silicon Material S8050 TRANSISTOR (NPN) S8050 SOT-23 Datasheet.pdf FEATURES Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y MAXIMUM RATINGS (TA=2...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Description SUPERFET III MOSFET is new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for o...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...
...Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V...
...Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitt...
...transistor is a complementary component to the SS8050W, designed for various electronic applications. It offers a maximum collector current of -1.5 A and a collector power dissipation of 0.2 W. The device is...
..., a PNP bipolar junction transistor designed for switching applications. It features a low collector-emitter saturation voltage and a high transition frequency, making it suitable for various electronic circ...
Product Overview The S9015 is a PNP bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and is complementary to the S9014. This device is suitable for various electroni...
Product Overview The SMBT2907A/MMBT2907A is a PNP Silicon Switching Transistor designed for various applications. It features a low collector-emitter saturation voltage and is Pb-free (RoHS compliant). This tra...
... Overview The S9014 is an NPN bipolar junction transistor (BJT) encapsulated in a SOT-23 plastic package. It is designed for general-purpose applications and is complementary to the S9015 transistor.Product ...
...a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the MMST3904 and offers a maximum collector current of 200 mA and a collector power dissipation of 20...