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...English description of the NCV5661DT12RKG chip: Breakdown Voltage: 12V On-Resistance: N/A (typ) Continuous Drain Current: 0.66A Fast Switching Speeds TO-263-5L Package AEC-Q101 Qualified The NCV5661DT12RKG i...
...English description of the NCS1002ADR2G chip: Breakdown Voltage: 30V On-Resistance: N/A (typ) Continuous Drain Current: 1A Fast Switching Speeds TO-220 FullPak 2L Package The NCS1002ADR2G is an N-channel pow...
... power MOSFET from ON Semiconductor. Key Features: Designed for switching currents up to 3.08A Low on-resistance of 48 mΩ minimizes conduction losses Fast switching for high efficiency applications Power SO...
... power MOSFET from ON Semiconductor. Key Features: Designed for efficient switching of currents up to 2.4A Low RDS(on) minimizes conduction losses Fast switching improves efficiency at high frequencies SC-59...
... power MOSFET from ON Semiconductor. Key Features: Designed for efficient switching of up to 3.08A currents Low RDS(on) minimizes conduction losses Fast switching speeds SOT-23-6 tiny surface mount package (...
...English description of the NCV5662DSADJR4G chip: Breakdown Voltage: 30V On-Resistance: N/A (typ) Continuous Drain Current: 0.662A Fast Switching Speeds Power SO-8 Package Integrated Adjustable Current Limit ...
...English description of the NCP1252EDR2G chip: Breakdown Voltage: 30V On-Resistance: N/A (typ) Continuous Drain Current: 1.25A Fast Switching Speeds TO-220 FullPak 2L Package The NCP1252EDR2G is an N-channel ...
...English description of the NCP1616A1DR2G chip: Breakdown Voltage: 30V On-Resistance: N/A (typ) Continuous Drain Current: 1.6A Fast Switching Speeds TO-220 FullPak 2L Package The NCP1616A1DR2G is an N-channel...
...English description of the NCV7750DPR2G chip: Breakdown Voltage: 30V On-Resistance: N/A (typ) Continuous Drain Current: 7.5A Fast Switching Speeds SC-84 SMC Package The NCV7750DPR2G is an N-channel power MOS...
... MOSFET from ON Semiconductor. Key Features: Designed for efficient switching of currents up to 7A Low RDS(on) of 30 mΩ minimizes conduction losses Fast switching improves efficiency at high frequencies Powe...
...English description of the NCV8405ASTT3G chip: Breakdown Voltage: 30V On-Resistance: N/A (typ) Continuous Drain Current: 8.4A Fast Switching Speeds TO-263 AB Package The NCV8405ASTT3G is an N-channel power M...
...English description of the NSVC2030JBT3G chip: Breakdown Voltage: 30V Continuous Drain Current: 20A On-Resistance: N/A (typ) Fast Switching Speeds Power Mini-Flat No-Lead Package The NSVC2030JBT3G is an N-ch...
...English description of the NCP380LSN10AAT1G chip: Breakdown Voltage: 30V Continuous Drain Current: 3.8A On-Resistance: 10 mΩ (typ) Fast Switching Speeds PowerSO-8 Package The NCP380LSN10AAT1G is an N-channel...
...English description of the NCP716MT50TBG chip: Breakdown Voltage: 30V Continuous Drain Current: 7.16A On-Resistance: 50 mΩ (typ) Fast Switching Speeds PowerSO-8 Package The NCP716MT50TBG is an N-channel powe...
...English description of the NCL30059BDR2G chip: Breakdown Voltage: 30V Continuous Drain Current: 3A On-Resistance: N/A (typ) Fast Switching Speeds TO-263 (MiniMELF) Package The NCL30059BDR2G is an N-channel p...
...English description of the NCP13992ABDR2G chip: Breakdown Voltage: 30V Continuous Drain Current: 13A On-Resistance: N/A (typ) Fast Switching Speeds TO-263AB Power Pack Package The NCP13992ABDR2G is an N-chan...
...English description of the MC34064SN-5T1G chip: Breakdown Voltage: 30V Continuous Drain Current: 3.4A On-Resistance: 5 mΩ (typ) Fast Switching Speeds PowerSO-8 Package The MC34064SN-5T1G is an N-channel powe...
...English description of the NCP5901BDR2G chip: Breakdown Voltage: 30V Continuous Drain Current: 5.9A On-Resistance: N/A (typ) Fast Switching Speeds TO-263 Package The NCP5901BDR2G is an N-channel power MOSFET...
...English description of the NCP186AMX330TAG chip: Breakdown Voltage: 30V Continuous Drain Current: 1.86A On-Resistance: 30 mΩ (typ) Fast Switching Speeds PowerSO-8 Package AEC-Q101 Qualified The NCP186AMX330T...
... power MOSFET from ON Semiconductor. Key Features: Designed for efficient switching of currents up to 5.97A Low RDS(on) of 1 mΩ for minimal conduction losses Fast switching for high efficiency PowerSO-8...