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Product Listing: IRF3808SPBF MOSFET Product Description: The IRF3808SPBF is a N-Channel MOSFET ideal for switching applications. It features an advanced High-Side MOSFET design with low on-resistance, fast swit...
...MOSFET Product Description: The AOD516 is a high voltage, low on-resistance, N-channel MOSFET designed for use in high frequency switching applications. This MOSFET is fabricated using the advanced high cell...
... for high-frequency switching applications and provides superior performance in terms of speed, accuracy, and power efficiency. It utilizes the high-speed switching of N-channel MOSFETs to provide excellent ...
AO3160 MOSFET Power Electronics Introducing the AO3160 MOSFET Power Electronics - an intelligent, efficient, and reliable power solution for a wide range of applications. This MOSFET transistor device is design...
...MOSFET Power Electronics The AON6522 MOSFET Power Electronics is an advanced power electronics technology designed to provide high-efficiency, high-reliability, and low-cost solutions for switching applicati...
FDBL86361-F085 MOSFET Electronics N-Channel 80 V 300 A 1.4 m Primary Switch for 12 V Systems Package 8-HPSOF N-Channel PowerTrench P-Channel QFET® MOSFET -60 V, -12 A, 135 Technology MOSFET (Metal Oxide) Drain ...
... switching characteristics. It is designed for use in high current switching applications. This MOSFET has a maximum drain-source voltage of 30V and a maximum drain current of 75A. It also has a breakdown vo...
...MOSFET Power Electronics Product Description: This MOSFET power electronics component is specifically designed for high-performance applications, providing efficient and reliable power control. The IRFL014NT...
...MOSFET Power Electronics Product Description: The IRFS7534TRLPBF is a 100V N-Channel MOSFET with a low RDS(on) for high efficiency power switching applications. This device offers both superior performance a...
... high power switching, motor control, and other power electronics applications. This device features a low on-resistance of 0.058 Ω, ultra-low gate charge, fast switching speed, and a wide range of operating...
...MOSFET Power Electronics This International Rectifier IPD053N06NATMA1 is a N-channel Power MOSFET with a maximum drain source voltage of 30 V and a drain current of 53 A. It features an RDS(on) of 0.045 Ω, a...
.... It features a low gate-to-drain charge, low gate-to-source charge, and a fast turn-on time. The FDN308P is ideal for fast switching and...
... a low on-state resistance and high-speed switching capabilities, making it ideal for power supplies, motor control, lighting, and portable electronics. Features: - Low on-state resistance - High-speed switc...
IRFR220NTRPBF Mosfet In Power Electronics High Performance Reliable Switching IRFR220NTRPBF MOSFET N-Channel Power MOSFET Product Parameters: • Drain-Source Voltage (Vdss): 100V • Continuous Drain Current (Id):...
...Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
SI4435DY P-Channel 30V 8.8A 2.5W Surface Mount Power management MOSFET 4435 MSL level 1 Datasheet Applications: · Power management · Load switch · Battery protection List Of Other Electronic Components In Stock...
...MOSFET −8.0 V, −3.7 A, Single P−Channel, SOT−23 Features • Leading Trench Technology for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint (3 x 3 mm) • Pb−Free ...
SI4435DY P-Channel 30V 8.8A 2.5W Surface Mount Power management MOSFET 4435 MSL level 1 Datasheet Applications: · Power management · Load switch · Battery protection List Of Other Electronic Components In Stock...
MJD122G Complementary Darlington Power Transistor switching power mosfet low power mosfet Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Ap...
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...