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Low Frequency Power Amplifier

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Total 217709 products for low frequency power amplifier Manufacture & Suppliers

CA-3118 Amplifier Board 1*60W 8-24V TPA3118 PBTL Mono Class D Digital Power Amplifier Audio Board

...Power Amplifier Audio Board Product Description: The sound quality is very good using this module. Mono digital audio amplifier chip. High output and low power consumption. Applicable speaker impedance: 4-8...

Shenzhen Creatall Electronics Co., Ltd.
China

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Tpa3118 1X60W 12-24V PBTL Mono Class D Digital Power Amplifier Board for Audio Module

...Amplifier Board Tpa3118 Hot Sale 1X60W TPA3118 PBTL Mono Class D Digital Power Amplifier Board Feature: The sound quality is very good using this module. Mono digital audio amplifier chip. High output and lo...

Shenzhen Creatall Electronics Co., Ltd.
China

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50W 50W TPA3116D2 Dual Channel Digital Power Amplifier Module for Audio Stereo Board

...Power Amplifier Board.It has a built-in amplifier module that can be connected directly to the speaker. 2.Features: 1>.Ultra small volume 2>.No POP noise 3>.Low power consumption 4>.High gain 5>.Support outp...

Shenzhen Creatall Electronics Co., Ltd.
China

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TPA3118 Series Audio Power Amplifier Board 60W Mono Digital Audio Comparator Chip Module

...Amplifier Board Tpa3118 Hot Sale 1X60W TPA3118 PBTL Mono Class D Digital Power Amplifier Board Feature: The sound quality is very good using this module. Mono digital audio amplifier chip. High output and lo...

Shenzhen Creatall Electronics Co., Ltd.
China

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5 Watt Output Power RF Linear Power Amplifier SMA Connector

... RF Linear power amplifier Module name: 5W 340MHz RF Linear power amplifier Model type: DS-PA5W_340 Main Features: NO numerical control Radio frequency index Test Item Index Note Power amplifier Working Freq...

Shenzhen dingshen Industrial Co., Ltd
China

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5.1-5.2GHz RF Power Amplifier Module Built In VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness

5.1-5.2GHz RF Power Amplifier Module with built-in VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness Product Description: RF Power Amplifier Module Our RF Power Amplifier Module is designed to provi...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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960-1215 MHz P1dB 50 dBm L Band Power Amplifier RF Power Amplifier

L Band Power Amplifier 960-1215 MHz P1dB 50 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employe...

Nanjing Shinewave Technology Co., Ltd.
China

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960-1215 MHz Psat 30 dBm RF Power Amplifier High Power Microwave Amplifier

L Band Power Amplifier 960-1215 MHz Psat 30 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employe...

Nanjing Shinewave Technology Co., Ltd.
China

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1600-2500 MHz 10 W Psat 40 dBm L Band Power Amplifier RF Power Amplifier

L Band Power Amplifier 1600-2500 MHz 10 W Psat 40 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are e...

Nanjing Shinewave Technology Co., Ltd.
China

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2.65 To 3.0 GHZ S Band High Power Amplifier Psat 20 dBm RF Power Amplifier

S Band Power Amplifier 2.65-3.0 GHZ Psat 20 dBm Rf Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employe...

Nanjing Shinewave Technology Co., Ltd.
China

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2 - 4 GHz 18dB S Band Power Amplifier P1dB 20 dBm RF Power Amplifier

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

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1.1 - 2.3 GHz S Band Power Amplifier P1dB 20 dBm RF Power Amplifier Module

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

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4 To 8 GHz C Band Power Amplifier P1dB 20 dBm Balanced RF Power Amplifier

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

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2 - 8 GHz C Band Power Amplifier Past CW 50 W Radar RF Power Amplifier

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

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0.7 - 6 GHz C Band Power Amplifier Psat CW 60 dBm RF Power Module Amplifier

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

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8000 - 11000 MHZ X Band Power Amplifier Psat 43 dBm RF Power Amplifier

...Power Amplifier 8000-11000 MHZ Psat 43 dBm Rf Power Amplifier Description This class AB GaN module is designed for both military and commercial applications. It is capable of supporting any signal type and m...

Nanjing Shinewave Technology Co., Ltd.
China

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40g 8 To 12 GHz X Band Power Amplifier P1dBm 21 dBm RF Power Amplifier

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

Active Member

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50 dB 9.5 To 10.5 GHz X Band Power Amplifier Psat 200 W RF Power Amplifier

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

Active Member

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9 - 10 GHz X Band Power Amplifier Past 1000W RF Power Amplifier Module

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

Active Member

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6 - 10 GHz X Band Power Amplifier Psat CW 50 W High Power RF Amplifier

... are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25℃, and in...

Nanjing Shinewave Technology Co., Ltd.
China

Active Member

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