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HMC849ALP4CETR RF Power Transistor High Power Low Noise Performance HMC849ALP4CETRR RF Power Transistors Product Features: -Operating Frequency: up to 4.5GHz -Gain: 11-14dB -Single-ended Output Power: +30dBm -....
...Amplifiers - Op Amps 2-Channel, 10-MHz, Low-Noise, RRIO, CMOS Op Amp For Cost-Sensitive Systems Operational Amplifiers - Op Amps 2-Channel, 10-MHz, low-noise, RRIO, CMOS op amp for cost-sensitive systems 8-T...
...Amplifiers - Op Amps 2-Channel, 10-MHz, Low-Noise, RRIO, CMOS Op Amp For Cost-Sensitive Systems Operational Amplifiers - Op Amps 2-Channel, 10-MHz, low-noise, RRIO, CMOS op amp for cost-sensitive systems 8-T...
LTC6406IMS8E#PBF High Speed Operational Amplifiers 800 MHz Low Noise Rail to Rail Input Differential Amplifier/Driver FEATURES Low Noise: 1.6nV/Hz RTI n Low Power: 18mA at 3V n Low Distortion (HD2/HD3): 80dBc...
LTC6406IMS8E#PBF High Speed Operational Amplifiers 800 MHz Low Noise Rail to Rail Input Differential Amplifier/Driver FEATURES Low Noise: 1.6nV/Hz RTI n Low Power: 18mA at 3V n Low Distortion (HD2/HD3): 80dBc...
...LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIERS • Low Power Consumption • Wide Common-Mode and Differential Voltage Ranges • Low Input Bias and Offset Currents • Output Short-Circuit Protection • Low Total Harmo...
...LOW-POWER OPERATIONAL AMPLIFIERS *Input Offset Voltage Drift ...Typically 0.1 µV/Month, Including the First 30 Days *Wide Range of Supply Voltages Over Specified Temperature Range: 0°C to 70°C . . . 3 V to 1...
OP07CSZ Low noise Low voltage General Purpose Operational Amplifier IC SOP8 FEATURES Low VOS: 75 μV maximum Low VOS drift: 1.3 μV/°C maximum Ultrastable vs. time: 1.5 μV per month maximum Low noise: 0.6 μV p-p ...
... amplification for demanding applications in a variety of industries, including medical, consumer, automotive, and industrial. This IC chip is ideal for applications requiring low-noise, low-power, and high-...
Product Overview The S9015 is a PNP transistor designed for low-level, low-noise pre-amplifiers. It is complementary to the S9014 transistor and offers good linearity characteristics. The marking for this trans...
... bipolar transistor primarily used in high-frequency electronic amplifier circuits. It offers a low noise figure and a high cutoff frequency, making it suitable for demanding RF applications.Product Attribut...
...low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It features high power gain, low noise characteristics, and a large dynamic range. Utilizing an ultr...
OP295GSZ-REEL7 High Performance Audio Amplifier IC Chip Features: - Low distortion and noise - Wide bandwidth - Low input offset voltage - Unity gain stable - High slew rate - Short-circuit protection Specifica...
...Amplifier IC Chips Features: • Low Total Harmonic Distortion + Noise (THD + N): 0.001% at 1 kHz • High Gain Accuracy: 0.05% max • Wide Power Bandwidth: 1.5 MHz • High Common-Mode Rejection Ratio (CMRR): 90 d...
...Amplifiers NE5532DR Chip Low noise SOP-8 Industry Standard ICs FEATURES • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ • Peak-to-Peak Output...
... in-circuit measurements using network, spectrum and signal source analyzers. With flat frequency response, low noise floor, and direct power from instrument connection, the U1818B allows measurements to be ...
...RF Amplifier 1.1GHz, Dual Gain Amp Product Attribute Attribute Value Manufacturer: Texas Instruments Product Category: RF Amplifier RoHS: Details Mounting Style: SMD/SMT Package / Case: VQFN-40 Type: Variabl...
...RF Amplifier 45-1000MHz NF 3dB Gain 23dB IGBT Module Manufacturer: Qorvo Product Category: RF Amplifier RoHS: Details Operating Frequency: 45 MHz to 1 GHz Operating Supply Voltage: 24 V Operating Supply Curr...
...RF power supply 2. The output of the wideband amplifier is blocked 3. Communication data is injected through the RF side 4. Frequency range: 10 - 6000MHz 2. Insertion loss: 0.3dB@512MHz 0.45dB@1575MHz 5. Max...
...Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF application...