| Sign In | Join Free | My burrillandco.com |
|
... automotive, industrial, and consumer electronics. It features an advanced trench gate structure that provides excellent switching performance, low on-resistance, and fast switching speeds. It also has maxim...
...MOSFET-TC4424AVOA713 Electronic Components Ic Chips Integrated Circuits TC4424AVOA713 Digi-Key Part Number TC4424AVOA713TR-ND - Tape & Reel (TR) TC4424AVOA713CT-ND - Cut Tape (CT) TC4424AVOA713DKR-ND - Digi-...
...Drivers 5.7kVrms 4A/6A Dual-channel Isolated Gate Driver Product Overview The UCC21521 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs...
Description: The JY213L is a high-speed 3-phase gate driver for power MOSFET and IGBT devices with three independent high and low side referenced output channels. Built-in dead time protection and shoot-through...
...Driver IC Controller with Non-Inverting Description The IR2104(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and ...
...Driver IC 3.3V, 5V,15V input logic Compatible Built-in deadtime (⇒ Pls Contact us if you want to get more detail informations of JY213H !!!!) DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driv...
...44V it is particularly suited for more reliable applications without regulated supply and for 35W driver circuits using low-cost complementary pairs. The UTC TDA2030A provides high output current and has ver...
... to achieve the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching applicat...
...on‐resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in high current load applications. ......
Product Description: 1. High voltage capability up to 500V 2. High speed switching 3. Low power dissipation 4. Low input current 5. Output current up to 500mA 6. Under voltage lockout (UVLO) 7. High noise immun...
... ■ THERMAL SHUTDOWN ■ CURRENT LIMITATION ■ PROTECTION AGAINST LOSS OF GROUND AND LOSS OF VCC ■ VERY LOW STAND-BY POWER DISSIPATION ■ REVERSE BATTERY PROTECTION (*) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEA...
...MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate ...
BUK7K6R2 40EX 5.8 MOhms LED Driver IC Chip Dual N Channel 40V Mosfet BUK7K6R2-40EX MOSFET Dual N-channel 40V Mosfet LFPAK-33-8 SMD/SMT 5.8 mOhms- 20 V, + 20 V Manufacturer: Nexperia Product Category: MOSFET RoH...
BUK7K6R2 40EX 5.8 MOhms LED Driver IC Chip Dual N Channel 40V Mosfet BUK7K6R2-40EX MOSFET Dual N-channel 40V Mosfet LFPAK-33-8 SMD/SMT 5.8 mOhms- 20 V, + 20 V Manufacturer: Nexperia Product Category: MOSFET RoH...
... Driver, Quick Conversion Pile Driver, Low Vibration Pile Driver, Damage-Free Pile Driver, Versatile Working Environment Pile Driver Product Overview Shanghai Yekun’s Low Noise Hydraulic Pile Driver is a pro...
NTD24N06LT4G MOSFET Power Electronics Product Description: The NTD24N06LT4G is a low-side MOSFET power electronics device designed to switch power in a wide range of applications. This device is rated for a max...
...Drivers 1.8A Low VTG Brushed DC Motor Driver 1 Features H-Bridge Motor Driver – Drives a DC Motor or Other Loads – Low MOSFET On-Resistance: HS + LS 280 mΩ 1.8-A Maximum Drive Current Separate Motor and Logi...
... VM: 0 to 11 V - Logic VCC: 1.8 to 7 V PWM or PH-EN interface - DRV8837: PWM, IN1 and IN2 - DRV8838: PH and EN Low-power sleep mode The maximum sleep current is only 120nA -...
...MOSFET Power Electronics The IRLMS1503TRPBF is a MOSFET Power Electronics device from Infineon Technologies. It is a N-Channel enhancement mode MOSFET that is suitable for use in a wide range of applications...
... N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switc...