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Integrated Circuit Chip NTMFS4C029NT1G MOSFET N-Channel Transistors 30 V 15A 5-DFN Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize ...
Integrated Circuit Chip NTMFS4C09NT1G MOSFET N-Channel Transistors 8-PowerTDFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minim...
Integrated Circuit Chip NTMFS4C024NT1G N-Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Swit...
... power switch, with integrated NMOS power FET and charge pump, targeted for the intelligent control of the variable kinds of resistive, inductive, and capacitive loads. Specification Of TPS1H100BQPWPRQ1 Part...
...Circuit Chip IMBG120R140M1H 1200 V SiC Trench MOSFET Transistors in TO-263-7 package Specification Of IMBG120R140M1H Product Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Sour...
AT42QT1481-AN-ND 44TQFP 10X101MM TRAY Surface Mount -40°C ~ 105°C 11b 13mA category Integrated Circuit (IC) Interface Sensor, capacitive touch manufacturer Microchip Technology series QMatrix™ type Button Numbe...
...Circuit Chip CY8C4014SXA-421Z 16KB FLASH ARM Microcontrollers - MCU Product Description Of CY8C4014SXA-421Z CY8C4014SXA-421Z 4000 Series Programmable System-on-Chip (PSoC®) are small members of the PSoC 4 pl...
... combined with low capacitances and very high switching operations. Specification Of SCT070H120G3AG Part Number: SCT070H120G3AG Drain-Source Voltage: 1200V Drain Current (Pulsed): 100A ......
...Circuit Chip SCT040H65G3AG SiC MOSFETs H²PAK-7 Wide Bandgap Transistors Product Description Of SCT040H65G3AG SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK...
... features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system...
...Circuit Chip TO-247-3 Zero Recovery Product Description Of MSC050SDA170B MSC050SDA170B is Zero Recovery Silicon Carbide Schottky Diode, 1700V 136A Through Hole, Package is TO-247-3. Specification Of MSC050S...
...Integrated Circuit Chip Product Description Of IPP65R190CFD7A IPP65R190CFD7A is 650V CoolMOS CFD7A SJ Power Device, the package is TO-220-3, Through Hole. Specification Of IPP65R190CFD7A Part Number IPP65R1...
...): ±20V Gate Charge (Qg) (Max) @ Vgs: 87 NC @ 10 V Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 6110 PF @...
... Single FETs Transistors, 160 mohm, 1200V, M1, Package is TO-247-3L. Specification Of NTHL160N120SC1 Part Number NTHL160N120SC1 Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V Power Dissipation (Max) 119...
Integrated Circuit Chip NVH4L080N120SC1 1200V N-Channel MOSFETs Transistors TO-247-4 Product Description Of NVH4L080N120SC1 NVH4L080N120SC1 Low ON resistance and compact chip size ensure low capacitance and ga...
...low capacitance and gate charge. Specification Of NTBG060N090SC1 Part Number NTBG060N090SC1 Configuration: Single Fall Time: 11 ns Forward Transconductance - Min: ......
...: ±20V Source Current (Body Diode): 133A Forward Transconductance(VDS = 10 V, ID = 18 A) - Typ: 96S Input Capacitance (Ciss) (Max) @ Vds: 3592 PF @ 75 V...
...Circuit Chip N-Channel 700V Through Hole MSC090SMA070 Transistors Product Description Of MSC090SMA070 MSC090SMA070 is SiC MOSFETs provide high efficiency to enable a lighter, more compact system with improve...
.... Specification Of MSC020SDA120B Part Number MSC020SDA120B Reverse Recovery Time (trr) 0 ns Current - Reverse Leakage @ Vr 200 µA @ 1200 V Capacitance @ Vr, F 1130pF @ 1V, 1MHz Mounting Type Through Hole Pac...
..., and thermal capacitance ratings at low reverse current for lower switching loss. Specification Of MSC360SMA120 Part Number: MSC360SMA120 Gate Charge: 34 NC @ ......