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...Circuit Chip BSZ100N06LS3GATMA1 8-PowerVDFN 60V N-Channel Transistors Product Description Of BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 The OptiMOS ™ 60V is ideal for synchronous rectification in switched mode po...
... Mount. Specification Of IPT015N10N5 Part Number IPT015N10N5 Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 50 V Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (......
...Circuit Chip NVH4L060N090SC1 Silicon Carbide MOSFETs Transistors TO-247-4 Product Description Of NVH4L060N090SC1 NVH4L060N090SC1 is 60mohm, 900V Silicon Carbide (SiC) N-Channel MOSFET Transistors, package i...
... 4.3V @ 20mA Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V Vgs (Max) +19V, -10V Input Capacitance (Ciss)...
...) @ Id 4.5V @ 1.89mA Gate Charge (Qg) (Max) @ Vgs 196 nC @ 12 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7370 pF @ 300 V...
...Circuits IPP60R065S7XKSA1 N-Channel 8A MOSFETs Transistors Product Description Of IPP60R065S7XKSA1 IPP60R065S7XKSA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density a...
...Circuit Chip NTHL080N120SC1A N-Channel 1200V 31A Transistors Product Description Of NTHL080N120SC1A NTHL080N120SC1A features planar technology that works reliably with negative gate voltage drives and turns ...
Electronic Integrated Circuits NTBLS1D1N08H MOSFETs N-Channel Transistors Product Description Of NTBLS1D1N08H NTBLS1D1N08H features low ON resistance and a compact chip size that ensures low capacitance and gat...
Chip Integrated Circuit NTBG080N120SC1 MOSFET Silicon Carbide Transistors Product Description Of NTBG080N120SC1 NTBG080N120SC1 features low ON resistance and a compact chip size that ensures low capacitance and...
... Circuit Chip Product Description Of NVH4L040N65S3F NVH4L040N65S3F is 650V, 65A, 4040mOhm MOSFET Single N-Channel Transistors, Through Hole, package is TO-247-4. Specification Of NVH4L040N65S3F Part Number ...
...Circuit Chip TW070J120B,S1Q N-Channel MOSFETs Transistors TO-3P-3 Product Description Of TW070J120B,S1Q TW070J120B,S1Q is Silicon Carbide N-Channel MOS Transistors, Through Hole TO-3P(N). Specification Of T...
...Circuit Chip TW027N65C,S1F N-Channel Transistors TO-247-3 Silicon Carbide Product Description Of TW027N65C,S1F TW027N65C,S1F is 650V 58A(Tc) 156W (Tc) Silicon Carbide N-Channel MOS Transistors, Through Hole...
...Circuit Chip SCT30N120H N-Channel 1200V Single MOSFETs Transistors Product Description Of SCT30N120H SCT30N120H is N-Channel 1200 V 40A (Tc) 270W (Tc) Transistors Surface Mount,the package is TO-263-3. Speci...
...Circuit Chip TW140N120C,S1F Single FETs Transistors TO-247-3 N-Channel Product Description Of TW140N120C,S1F TW140N120C,S1F is 1200V 20A(Tc) 107W(Tc) N-Channel Silicon Carbide Transistors, package is TO-247...
... Hole. Specification Of TW030N120C,S1F Part Number: TW030N120C,S1F Technology: SiCFET (Silicon Carbide) Input Capacitance: 2925pF Gate Threshold Voltage(Min): 3V Drain Cut-Off Current(Max): 20µA Channel-To-A...
...Circuit Chip TW048N65C,S1F TO-247-3 Silicon Carbide N-Channel Transistors Product Description Of TW048N65C,S1F TW048N65C,S1F is 650V 65mOhms SiC N-Channel Transistors, Through Hole, package is TO-247-3. Spe...
...circuits FEATURES • Good CTR linearity depending on forward current • Isolation test voltage, 5300 VRMS • High collector emitter voltage, VCEO = 70 V • Low saturation voltage • Fast switching times • Low CTR...
Electronic voltage sensors used in smart circuit breakers for medium and low voltage power distribution fields Description CDJ-S-36KV-M21 electronic voltage sensor is a new type of 20-35kV electronic voltage se...
... SOT-323 Package and Tape andamp; Reel Packaging for High-Speed Circuit Design andnbsp; Features Very high switching speed Low junction capacitance Low leakage current Compliant to RoHS (w/o exemp.) REACH, C...
... measuring machine constructed by the technology of precision machinery, optic, electronic etc.. Features in the VMM control system of AR- 3 are as follows: Special processor (ASP) to significantly reduce th...