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MRF21090 is a RF Power Field Effect Transistor. Part NO: MRF21090 Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MRF18060A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF18060A Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MRF374A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF374A Brand: FSL Date Code: 286+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MW6S010G is a RF Power Field Effect Transistor. Part NO: MW6S010G Brand: FSL Date Code: 393+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MW6S010 is a RF Power Field Effect Transistor . Part NO: MW6S010 Brand: FSL Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
TIP107 Darlington Power Transistors (PNP) complementary silicon power transistors Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: TO...
2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINN...
...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good q...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wi...
....on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/......
... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designe...
FGH40N60SFD Igbt Transistors 600V 40A Field Stop Transistor TO-247-3 290W Description Using Novel Field Stop IGBT Technology, ON Semiconductors new series of Field Stop IGBTs offer the optimum performance for ...
FGH60N60SFDTU Insulated Gate Bipolar Transistor 600V 60A 378W IGBT Transistors Applications Solar Inverter, UPS, Welder, PFC Specifications Product Attribute Attribute Value Product Category: IGBT Transistors...
...Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(O...
...Power Transistor - REF03GSZ-REEL7 Product Description: The REF03GSZ-REEL7 is a high-power, high-efficiency RF power transistor designed for use in wireless communication applications. This device provides ex...
...%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/......
...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...
...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emit...