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BLF7G22L-130 is a Power LDMOS transistor. Part NO: BLF7G22L-130 Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
BLF7G10LS-250P is a Power LDMOS transistor. Part NO: BLF7G10LS-250P Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
BLF7G10L-250P is a Power LDMOS transistor. Part NO: BLF7G10L-250P Brand: Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MRF21090 is a RF Power Field Effect Transistor. Part NO: MRF21090 Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MRF18060A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF18060A Brand: MOT Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MRF374A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF374A Brand: FSL Date Code: 286+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MW6S010G is a RF Power Field Effect Transistor. Part NO: MW6S010G Brand: FSL Date Code: 393+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
MW6S010 is a RF Power Field Effect Transistor . Part NO: MW6S010 Brand: FSL Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
TIP107 Darlington Power Transistors (PNP) complementary silicon power transistors Features Designed for general-purpose amplifier and low speed switching applications RoHS Compliant Mechanical Data Case: TO...
2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINN...
...Power Transistor The PHE13003C is a high voltage, high speed, planar passivated NPN power switching transistor designed for various electronic applications. It offers fast switching speeds, high typical DC c...
...Power Transistor designed for high current output up to 3A. It features low saturation voltage and serves as a complement to the 2SD882. This transistor is suitable for applications requiring efficient power...
...Power Transistor The 2SAR542P is a PNP Middle Power Transistor designed for driver applications. It offers a low VCE(sat) of -0.4V Max. (IC/IB= -2A/ -100mA) and is complementary to the NPN type 2SCR542P. Thi...
...Power Amplifier With TOSHIBA Power Transistors (MA-4400) Quick details: Atopt BIG TOSHIBA transistor, very perfect sound Efficent cooling system, ensure the power amplifier stability Classic products, good q...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and ...
...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wi...
...Power Transistor Product Description Innotion’s YP601820T is a 20-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide...
....on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/......
... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designe...