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Medium Power Transistor

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Total 24844 products for medium power transistor Manufacture & Suppliers

SI4355-B1A-FMR RF Power Transistor - High Efficiency And Reliability

... RF Power Transistor Features: • High Power Output • Low Noise Figure • High Efficiency • Broadband Operation • Low Distortion • High Reliability • RoHS Compliant Specifications: • Frequency Range: 400 MHz -...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SI4010-C2-GTR RF Power Transistor - High Power Output And Stability

SI4010-C2-GTR RF Power Transistor Product Features: �� 900 MHz to 2.7 GHz Frequency Range �� 10 W Output Power at 2.4 GHz �� 30 V Nominal Drain Voltage �� 6.8 dB Typical Gain at 2.4 GHz �� 56% Typical Efficiency at ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SI4421-A1-FTR RF Power Transistors - High Performance And Durability

Product Listing: SI4421-A1-FTR Parameters: �� Type: RF Power Transistor �� Technology: GaN �� Package Type: SMD �� Operating Voltage: 40V �� Operating Frequency: 0.5 - 3 GHz �� Output Power: 50W �� Power Gain: > 12.5 ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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SI1000-E-GM2R RF Power Transistor - High Power Output Low Noise

SI1000-E-GM2R RF Power Transistor Features: �� 500-1000 MHz Operating Frequency Range �� 28V Operating Voltage �� 10W Output Power �� 6 dB Gain �� High Efficiency �� Low Noise �� Low Distortion �� High Linearity Applic...

Shenzhen Sai Collie Technology Co., Ltd.
China

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RF Power Transistor HMC8038LP4CETR - High Performance And Reliability

HMC8038LP4CETR RF Power Transistor Specifications: �� Frequency Range: DC - 6GHz �� Maximum Power Output: 28dBm �� Gain: 15.5dB �� Supply Voltage: 3.5V �� Operating Temperature: -55��C to +150��C �� P1dB Output Power: ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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ADL5602ARKZ-R7 RF Power Transistor High-Frequency And High-Power Output

Product Listing: ADL5602ARKZ-R7 RF Power Transistor Features: �� High Output Power: >35 dBm �� High Efficiency: >50% �� Wide Bandwidth: 5.5 to 6.5 GHz �� Low Cost �� Low-Noise �� Low-Intermod Performance �� RoHS Compl...

Shenzhen Sai Collie Technology Co., Ltd.
China

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HMC544AE High-Power 50W GaN-On-SiC RF Power Transistor

HMC544AE RF Power Transistor Features: - High Output Power: 28 dBm Typical - High Gain: 14 dB Typical - Low Noise Figure: 2 dB Typical - Excellent Linearity - Wide Bandwidth: 600 MHz - RoHS Compliant Package: S...

Shenzhen Sai Collie Technology Co., Ltd.
China

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AD8342ACPZ-REEL7 RF Power Transistors ISM High Performance Low Cost

...: Product: AD8342ACPZ-REEL7 RF Power Transistors Package: Reel Configuration: Single Operating Frequency Range: DC - 6GHz Gain: 17 dB Noise Figure: 1.7 dB Power Supply: +5.0V Supply Current: 5.0mA Supply Vol...

Shenzhen Sai Collie Technology Co., Ltd.
China

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HMC915LP4ETR RF Power Transistors High Performance High Efficiency

HMC915LP4ETR RF Power Transistor - High Performance High Efficiency Product Specifications: - Frequency Range: 9-10GHz - Power Gain: 13 dB - Output Power: 23 dBm - Supply Voltage: +5V - Current Consumption: 1.2...

Shenzhen Sai Collie Technology Co., Ltd.
China

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BLF178XR 28dB Mosfet Power Transistor 50V 40mA 108MHz Frequency

...power transistor for broadcast and industrial applications in the HF to 128 MHz band. 1. 2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 ...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors

FS300R17OE4B81BPSA1 1700V 300A 20mW Medium Power IGBT Modules Transistors Product Description Of FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. Specifica...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FP35R12W2T7B11 1200V 35A 20mW Medium Power Single IGBT Transistors Module

Automotive IGBT Modules FP35R12W2T7B11 1200V 35A 20mW Medium Power Single IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Deliver...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FP35R12W2T4B11 1200V Medium Power Single IGBT Transistors Module Chassis Mount

Automotive IGBT Modules FP35R12W2T4B11 1200V Medium Power Single IGBT Transistors Module Chassis Mount [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + De...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules F3L75R12W1H3B27 45A 275W Medium Power Single IGBT Transistors Module Chassis Mount

Automotive IGBT Modules F3L75R12W1H3B27 45A 275W Medium Power Single IGBT Transistors Module Chassis Mount [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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Automotive IGBT Modules FP35R12W2T4PB11 70A 20mW Medium Power Single IGBT Transistors Module

Automotive IGBT Modules FP35R12W2T4PB11 70A 20mW Medium Power Single IGBT Transistors Module [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Dat...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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RF Power Transistors MRF5177 - Motorola, Inc - 30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

..., 400MHZ RF POWER TRANSISTOR NPN SILICON Description: …designed for VHK/UHF power amplifier applications.This device is optimized for rugged performance in 225-400MHz communications equipment. Applications: ...

Mega Source Elec.Limited
China

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BD439 Power Mosfet module Plastic Medium Power Silicon NPN Transistor

Silicon NPN Power Transistors BD439 BD441 DESCRIPTION • With TO-126 package • Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 ...

ChongMing Group (HK) Int'l Co., Ltd
China

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ZTX958STZ PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR high voltage power mosfet

ZTX958STZ PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR high voltage power mosfet FEATURES * 0.5 Amp continuous current * Up to 1.5 Amps peak current * Very low saturation voltage * Excellent gain cha...

ChongMing Group (HK) Int'l Co., Ltd
China

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P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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2SC5589 Toshiba 200kHz Mosfet Power Transistor For Switching

...Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works f...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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