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We can supply CSD19532Q5B, send us a request quote to request CSD19532Q5B pirce and lead time, https://www.henkochips.com a professional electronic components distributor. With 10+ Million line items of availab...
AC SSR Relay AC SSR of Horizontal Type Double LED Indicator Description of AC Single Phase SSR Solid State Relay solid state relay PDF: https://maiimg.com/free/?e=dyPPp/s2DmrS66 rectifer.pdf power controller.pd...
Product Overview The IKW50N65H5 is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losse...
Product Overview The IXXH60N65C4 is an Insulated Gate Bipolar Transistor (IGBT) utilizing advanced Trench and Field Stop (T-FS) technology. This design enhances performance by reducing conduction losses, improv...
...MOSFET Power Electronics N-Channel OptiMOSTW3 Package PG-TO252-3 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive ...
High Light : Electronic Components/ Integrated Circuits / Ic Chip Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ ...
...Humidity<90%, No condensation Discharge current 60A 80A 100A 120A Over discharge current protection 70A 90A 110A 130A MOSFET ≤10mΩ ≤10mΩ ≤10mΩ ≤10mΩ Charge current 40A 60A 80A 100A Charging Voltage 57.6V 57.6V 57.6V 57.6V Over charge protection...
...MOSFET from ON Semiconductor. Key Specifications: Breakdown voltage: 20V On-resistance: 35mΩ (max) Continuous drain current: 100A Fast switching speeds Advanced diode for increased efficiency TO-220FB packag...
...27 Ω (max) Continuous drain current: 100A Fast switching speeds TO-248-4 package Designed for applications requiring high continuous current switching capabilities up to 100A. Its low on-resistance enables e...
...MOSFET from ON Semiconductor. Key Specifications: Breakdown voltage: 60V On-resistance: 2.5 mΩ (typ) Continuous drain current: 100A Fast switching speeds TO-220WDF package Designed for applications requiring...
...MOSFET from ON Semiconductor. Key Specifications: Breakdown Voltage: 60V On-Resistance: 2.5 mΩ (max) Continuous Drain Current: 100A Fast Switching Speeds TO-247 Package Designed for applications requiring ef...
...MOSFET from ON Semiconductor. Key Specifications: Breakdown Voltage: 50V On-Resistance: 0.05Ω (typ) Continuous Drain Current: 100A Fast Switching Speeds TO-247-3L Flat Lead Package Designed for applications ...
...Mosfet Array 20mW, Chassis Mount. Specification Of FF11MR12W1M1PB11BPSA1 Part Number: FF11MR12W1M1PB11BPSA1 IDRM: 200A COSS Stored Energy: 176 µJ Package / Case: Module Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10...
... optimized DFN PowerSSO8 package. As a 17.8mΩ, 60V N-Channel MOSFET, it is optimized for high power density applications with stringent thermal constraints. Key Features: 60V voltage rating 100A continuous d...
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) Continuous Current IS 50 A Pulsed Current3 ISM 150 Forward Voltage1 VSD IS = 25A, VGS = 0V 0.9 1.3 V Reverse Recovery Time trr IF = IS, dlF/dt = 100A ...
Product Detail Packaging Tray Part Status Active Transistor Type NPN/PNP Current - Collector (Ic) (Max) 15A Voltage - Collector Emitter Breakdown (Max) 120V Vce Saturation (Max) @ Ib, Ic 5V @ 7A, 15A Current - ...
Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN/PNP Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 200V Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 10A Curren...