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...MOSFET High Performance Power Electronics Solution for Maximum Efficiency Description: The IRFR4620TRLPBF is a N-Channel MOSFET transistor with a rated drain current of 10A and a maximum drain-source voltage...
IRL60HS118 MOSFET Power Electronics Product Listing Product Name: IRL60HS118 MOSFET Power Electronics Description: This MOSFET is designed for use in high-frequency applications, such as switching power supplie...
...MOSFET Power Electronics Product Description: The IRFB3004PBF is a N-channel MOSFET Power Electronics designed for use in high frequency switch-mode power supplies, general purpose switching and amplifier ap...
...Amplifier SERVO DRIVER 3W 24VDC MINI Description: Yaskawa SGDF-B3CP Sigma Mini AC Servo Amplifier This unit ships in the original manufacturer's packaging. SGDF-B3CP 24 V DC Input 3 W (4.02hp) Rated Capacity...
...circuit Place of Origin: China Brand Name: Original Description: Ic Chip Voltage - Breakdown: 30V Frequency - Switching: 100MHz Power (Watts): 250W Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Sur...
Product Description Product Detail Packaging Tube Part Status Obsolete Type Class AB Output Type 2-Channel (Stereo) Max Output Power x Channels @ Load 10W x 2 @ 8Ohm Voltage - Supply 6.5V ~ 18V Features Mute, S...
...MOSFET is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) that has been developed to optimize the performance of high-frequency and high-efficiency electrical applications. This Silicon ...
... BATTERY POWERED INSTRUMENTS TEST EQUIPMENT Amplifier Type General Purpose Number of Circuits 2 Output Type - Slew Rate 0.8V/µs Gain Bandwidth Product 1MHz Current - Input Bias 500pA Voltage - Input ......
...Amplifier 2 Circuit Rail-to-Rail FEATURES Single-Supply Operation: 2.7 V to 5.5 V Low Supply Current: 45 A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to...
... BATTERY POWERED INSTRUMENTS TEST EQUIPMENT Amplifier Type General Purpose Number of Circuits 2 Output Type - Slew Rate 0.8V/µs Gain Bandwidth Product 1MHz Current - Input Bias 500pA Voltage - Input ......
...Amplifier 2 Circuit Rail-to-Rail FEATURES Single-Supply Operation: 2.7 V to 5.5 V Low Supply Current: 45 A/Amplifier Wide Bandwidth: 1 MHz No Phase Reversal Low Input Currents: 4 pA Unity Gain Stable Rail-to...
...MOSFET Power Electronics The FDV301N is an N-channel power MOSFET designed for high power switching applications. It is suitable for use in high-efficiency power conversion circuits, such as DC-DC converters...
... is capable of enhancing signals for optimal performance in various RF systems. Equipped with a multistage amplification system, the RF Amplifier utilizes advanced voltage amplifier circuits to ensure clear ...
...MOSFET Power Electronics High Performance Reliable Switching for Your Projects Product Description: IRFH9310TRPBF is a high power N-Channel MOSFET that features low on-resistance, high frequency operation, a...
IRF4905PBF MOSFET Product Description: The IRF4905PBF is a high-performance power MOSFET, featuring low on-resistance and fast switching times. This MOSFET is suitable for use in power management applications, ...
... 4A SOT23-3L -30V, -4A, P-channel MOSFET Diodes and Rectifiers The AO3401A/L uses advanced trench technology to provideexcellent RDS(ON) , low gate charge and operation gatevoltages as low as 2.......
...−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. Specification Of NTMFS4C028NT1G FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C...
... in hybrid and electric vehicles. Built on a state-of-the-art SiC trench technology combined with .XT interconnection technology the silicon carbide mosfet is specifically designed to meet the...
...Circuit Chip STL24N60M6 Power MOSFET Transistors 600V 8PowerVDFN Product Description Of STL24N60M6 STL24N60M6 is Single FETs Power MOSFET Transistors, Low gate input resistance, the Operating Temperature is ...
... is PG-TO252-3(Surface Mount). Specification Of IPD06P004N Part Number IPD06P004N FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C...