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SIR466DP-T1-GE3 MOSFET Power Electronics High Performance Low Vce(sat) High Efficiency Switching Description: The SIR466DP-T1-GE3 MOSFET is a high-voltage N-channel MOSFET designed to provide maximum efficiency...
... to minimize the on-state resistance while providing superior switching performance and high avalanche energy strength. Product Parameters: Vdss: 100V Rds(on): 0.0075Ω Id: 55A Package: D2PAK-7 ......
...MOSFET Description: This is an N-Channel, through-hole MOSFET with an on-state resistance of 4.7 mOhms. It is capable of withstanding a maximum drain-source voltage of 100V and a maximum drain current of 72A...
... N Channel MOSFET for Power Electronics Applications Product Description: MOSFET IPB108N15N3G is a high-performance, advanced technology power MOSFET designed for use in switching applications. It features l...
... to provide excellent switching performance and protection against current overloads. The MOSFET is housed in a small package making it suitable for high density applications. Parameters: • Drain Source Volt...
BSC016N06NS MOSFET Power Electronics High-Performance and Reliable Switching Solution Product Name: BSC016N06NS N-Channel MOSFET Product Parameters: • Type: N-Channel Enhancement Mode MOSFET • Voltage: 60V • Cu...
... gate charge, making it ideal for power switch applications. The product also has a low input capacitance and fast switching speeds. Specifications: • N-Channel MOSFET • Integrated Schottky Diode • Ultra-Low...
...MOSFET Product Description: The AOD516 is a high voltage, low on-resistance, N-channel MOSFET designed for use in high frequency switching applications. This MOSFET is fabricated using the advanced high cell...
...low on-resistance. It is suitable for a wide range of applications, including load switching and DC-DC conversion. Features: • Low On-Resistance: the on-resistance of this device is low, allowing for efficie...
... for high-frequency switching applications and provides superior performance in terms of speed, accuracy, and power efficiency. It utilizes the high-speed switching of N-channel MOSFETs to provide excellent ...
AO3160 MOSFET Power Electronics Introducing the AO3160 MOSFET Power Electronics - an intelligent, efficient, and reliable power solution for a wide range of applications. This MOSFET transistor device is design...
...MOSFET Power Electronics The AON6522 MOSFET Power Electronics is an advanced power electronics technology designed to provide high-efficiency, high-reliability, and low-cost solutions for switching applicati...
...MOSFET Power Electronics FETs High Performance Applications MIC94050YM4-TR N-Channel Enhancement Mode MOSFET Description: The MIC94050YM4-TR is a N-Channel Enhancement Mode MOSFET from Microchip Technology. ...
FDBL86361-F085 MOSFET Electronics N-Channel 80 V 300 A 1.4 m Primary Switch for 12 V Systems Package 8-HPSOF N-Channel PowerTrench P-Channel QFET® MOSFET -60 V, -12 A, 135 Technology MOSFET (Metal Oxide) Drain ...
... –20 V, –0.83 A, 0.5 Ω –20 V, –0.83 A, 0.5 ΩSingle P-Channel (–1.5 V) Specified PowerTrench® MOSFET –20 V, –0.83 A, 0.5 Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuou...
... switching characteristics. It is designed for use in high current switching applications. This MOSFET has a maximum drain-source voltage of 30V and a maximum drain current of 75A. It also has a breakdown vo...
...MOSFET Power Electronics Product Description: This MOSFET power electronics component is specifically designed for high-performance applications, providing efficient and reliable power control. The IRFL014NT...
...MOSFET Power Electronics Product Description: The IRFS7534TRLPBF is a 100V N-Channel MOSFET with a low RDS(on) for high efficiency power switching applications. This device offers both superior performance a...
... high power switching, motor control, and other power electronics applications. This device features a low on-resistance of 0.058 Ω, ultra-low gate charge, fast switching speed, and a wide range of operating...
...MOSFET Power Electronics This International Rectifier IPD053N06NATMA1 is a N-channel Power MOSFET with a maximum drain source voltage of 30 V and a drain current of 53 A. It features an RDS(on) of 0.045 Ω, a...