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..., a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is constructed with a P-channel MOSFET with a fast switching speed and low on-sta...
...Performance MOSFET Power Electronics Ideal for Automotive Applications Product Name: IRFR014TRLPBF MOSFET Description: This MOSFET is a N-Channel Enhancement Mode MOSFET designed for use in high frequency DC...
... for use in switching applications. It features an advanced trench technology and a high-cell density cell design to provide improved RDS(ON). The TO-220 package provides excellent thermal performance and ru...
...RDS (on) of 0.0015Ω, an ID of 60A and an avalanche energy rating of 8mJ. Key Features: • N-Channel Power MOSFET • RDS (on) of 0.0015Ω • ID of 60A • Avalanche Energy Rating of 8mJ • RoHS Compliant • Pb-Free W...
...MOSFET Product Description: The IRFP264PBF Power MOSFET is a high performance, high voltage N-Channel MOSFET with a maximum drain-source voltage of 500V. This MOSFET has a drain current of 24A and a maximum ...
...MOSFET Power Electronics High Voltage High Current Low On Resistance The IRFH6200TRPBF from Infineon is a single N-channel HEXFET® power MOSFET in a TO-220AB package. It is a high-side MOSFET featuring low g...
...MOSFET High-Performance Power Electronics Solution for Automation Control IPW65R110CFD N-Channel Power MOSFET Product Description: The IPW65R110CFD N-Channel Power MOSFET is a high-speed, low-loss device des...
... from a supply voltage of up to 100V and has a low RDS(on) of 0.035Ω. It has a maximum continuous drain current of 8A and a maximum power dissipation of 22W. This MOSFET comes in a TO-220F package and is sui...
...MOSFET High Performance Low RDS on for Power Electronics Applications Product Description: The IRLZ44NPBF is an N-Channel MOSFET designed to provide superior performance in power management applications. Thi...
...resistance of 0.024Ω. 4. Low gate charge of 25nC. 5. High speed switching of over 30V/ns. 6. Ease of paralleling. 7. Low thermal resistance. 8. Lead-free (RoHS compliant). Product Status Active FET Type N-Ch...
... the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of ot...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche ratin...
... and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other a...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate charge. These featur...
Darlington Bipolar Mosfet Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technol...
BTS5215L Chipscomponent Electronic Components IC Chips. BTS5215L MOSFET Chip Integrated Circuit New And Original HSOP12 Source SWITCH IC-Power distribution SMART HI SIDE PWR SWITCH INDUSTRY APP Category Integra...
Product Listing: SQ2309ES-T1_BE3 MOSFET Features: • Low on-resistance • High power dissipation • Low gate charge • Fast switching speed • Avalanche rated • RoHS Compliant Absolute Maximum Ratings • Drain Source...
SI2347DS-T1-BE3 MOSFET Power Electronics High Performance and Reliable Power Switching Solution Parameters: • Drain-Source Voltage (VDS): -55V • Gate-Source Voltage (VGS): -20V • Drain Current (ID): -......
IRLR2905ZTRPBF MOSFET Power Transistor High Performance Low On Resistance Fast Switching Features: • Logic Level Gate Drive, 4.5V to 20V • Low On-Resistance RDS(on) • 100% UIL Tested • RoHS Compliant • ......
.... 2. Low On-Resistance: The MOSFET's low on-resistance of 0.270 at 10V gate-sourcevoltage helps to reduce power losses and improve overall system efficiency.Fast Switching Speeds: The SIHF12N60E-E3 has a fas...