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...power density, and low on-resistance. With its high efficiency, it is well suited for use in high-power switching applications. Features: • Wide range of operating conditions up to 400V • High power density ...
Product Listing: NTF6P02T3G MOSFET Power Electronics Product Type: MOSFET Power Electronics Brand: NTF6P02T3G Voltage: 6V Continuous Drain Current: 2A RDS-on: 3 mOhm Power Dissipation: 5.4 W Operating Temperatu...
...MOSFET Power Electronics Product Description: The FDD86569-F085 MOSFET Power Electronics is a high-performance, low-voltage, low-power device designed for use in a wide range of power conversion and control ...
...MOSFET Power Electronics Product Description: The NVMFS5C468NT1G is a high power MOSFET device designed for power electronics applications. It features a low drain-source on-resistance (RDS(on)) of 4.68mΩ an...
...MOSFET Power Electronics The FDMC8010 is a highly advanced MOSFET power electronics device designed to provide superior performance in a wide range of applications. It features a low on-resistance of 10 mΩ, ...
MOSFET Power Electronics FDMA86265P Specifications: Technology: MOSFET Power Rating: 100 W Drain-Source Voltage (VDS): 650 V Continuous Drain Current (ID): 28 A RDS(on): 0.26 Ohms Gate Charge (Qg): ...
This listing is for a FDMA530PZ MOSFET Power Electronics. The FDMA530PZ MOSFET Power Electronics is a high-efficiency, low-voltage, and high-current solution for power management applications. It features a low...
...MOSFET High Performance Low On Resistance Power Management for Advanced Applications Product Description: The IRF9358TRPBF is an N-Channel Power MOSFET that is a part of the International Rectifier (IR) port...
...MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching perform...
...MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ...
...MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon ar...
...MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effe...
...MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R...
AO3420, N-Channel Enhancement Mode Field Effect Transistor Features: - 30V Drain-Source Breakdown Voltage (VDSS) - 150mA Continuous Drain Current (ID) at 25C - 8.8A Drain-Source On-State Resistance (RDS(on)) a...
Switching Regulators STR-W6753 Universal-Input/58 W Off-Line QuasiResonant Flyback Switching Regulator The STR-W6753 is a quasi-resonant regulator specifically designed to satisfy the requirements for increased...
Switching Regulators STR-W6754 Universal-Input/100 W Off-Line QuasiResonant Flyback Switching Regulator The STR-W6754 is a quasi-resonant regulator specifically designed to satisfy the requirements for increase...
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......