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...Driver Power MOSFET 8-HSOP Toshiba TB67H45 Brushed Motor Drivers Toshiba TB67H45 Brushed Motor Drivers are Pulse Width Modulation (PWM) chopper-type DC brushed motor drivers. These devices support PWM consta...
IR2110PBF Marking IR2110 Half-Bridge Gate Driver IC Non-Inverting 14-DIP Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 3.3V ~ 20...
TPS20620D SOP ,Driver, Power Switch ICs Power Distribution FEATURES 70-m High-Side MOSFET 1-A Continuous Current Thermal and Short-Circuit Protection Accurate Current Limit (1.1 A min, 1.9 A max) Ope...
TC4427EPA TC4427 Low-Side Gate Driver IC Non-Inverting 8-PDIP Driven Configuration Low-Side Channel Type Independent Number of Drivers 2 Gate Type N-Channel, P-Channel MOSFET Voltage - Supply 4.5V ~ 18V Logic V...
IR4428 Low-Side Gate Driver IC Inverting, Non-Inverting 8-PDIP Driven Configuration Low-Side Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 6V ~ 20V Logic Voltage...
IR2110PBF Marking IR2110 Half-Bridge Gate Driver IC Non-Inverting 14-DIP Driven Configuration Half-Bridge Channel Type Independent Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 3.3V ~ 20...
...ICs MX30LF1GE8AB-XKI PCA9617ADP MOSFET Gate Door Drivers FEATURES Wide Operating VIN: Up to 60V 1Ω Pull-Down, 2.2Ω Pull-Up for Fast Turn-On and Turn-Off Times with 35ns Propagation Delays Internal Charge Pum...
...ICs MX30LF1GE8AB-XKI PCA9617ADP MOSFET Gate Door Drivers FEATURES Wide Operating VIN: Up to 60V 1Ω Pull-Down, 2.2Ω Pull-Up for Fast Turn-On and Turn-Off Times with 35ns Propagation Delays Internal Charge Pum...
...ICs) TC4420EPA TC4420CPA Mosfet 6A IC DIP GATE DRIVER IC 4.5V-18V Or SOIC TC4420EOA TC4420COA Specification :TC4420EPA TC4420CPA Category Integrated Circuits (ICs) Product Name Electronic components Model nu...
...-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility.This allows for N-channel MOSFET control in halfbridge, full-bridge, two-switch forward, and acti...
...Mosfet Driver Using Transistor , Durable High Amp Transistor Mosfet Driver Using Transistor Description: The AP6H03Suses advanced trench technology to provide excellent RDS(ON) and low gate charge . The comp...
...Mosfet Driver Using Transistor , Durable High Amp Transistor Mosfet Driver Using Transistor Description: The AP6H03Suses advanced trench technology to provide excellent RDS(ON) and low gate charge . The comp...
74HC08D,653 Integrated Circuit Stmicroelectronics Mcu PCBA Mosfet Driver SOIC-14 Category Type: with door Number of channels: 4 Power supply voltage: 2V~6V Static current (Max.) : ......
Dual 3A-Peak Low-Side MOSFET Driver Features • Reliable, low-power bipolar/CMOS/DMOS construction • Latch-up protected to >500mA reverse current • Logic input ......
JY2605M Dual N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION The product utilizes the latest trench processing techniques to achieve the high cell density and red...
JY14M N Channel Enhancement Mode Power MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY14M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance ...
JY4N8M N Channel Enhancement Mode Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces th...
...NSI6601MC-DSPR Isolated Gate Driver IC SOP8 Integrated Circuit Chip Product Description Of NSI6601MC-DSPR NSI6601MC-DSPR is a single-channel isolation gate driver suitable for driving IGBT, power MOSFET and...
FAN73611MX High-Side Gate Driver IC Non-Inverting 8-SOIC Datasheet:FAN73611MX Category Gate Drivers Mfr onsemi Driven Configuration High-Side Channel Type Single Gate Type IGBT, N-Channel MOSFET Voltage - Suppl...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...