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...power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices are manufactured in epitax...
Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038 Plastic DarliCM GROUPon complementary silicon power transistors are designed for general purpose amplifier and low−speed swi...
...MOSFET Power Electronics High Performance Reliability for Your Applications This IRFP460APBF MOSFET is a high-performance, low-cost, power MOSFET. It features a low-threshold voltage and a high-current capab...
Product Detail IRF3205 also have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube P...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ I...
Silicon PNP Power Transistors 2SA940 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications Absolute maximum ratings (Ta=25℃) SYMBO...
...power transistors designed for surface-mounting applications. Housed in a SOT89 (SC-62) plastic package, these transistors offer high collector current capability (IC and ICM), multiple current gain selectio...
...power transistors designed for Surface-Mounted Device (SMD) plastic packages. These transistors offer high current capability, multiple current gain selections, and high power dissipation. They are suitable ...
... N-channel MOSFET with low drain-source on-resistance. It features low gate charge, low output capacitance, fast switching times, and low gate-to-drain charge. This MOSFET is ideal for use in high-side switc...
Product Listing: Product Name: IRL7833PBF Description: N-Channel MOSFET Parameters: -VDSS: 30V -RDS(on): 0.025ohm -Id: 40A -Package: PowerFLAT 5x6 -Transistor Polarity: N-Channel -VGS: -20V -Maximum Operating T...
Description: This BSC035N10NS5ATMA1 MOSFET is an N-Channel enhancement mode field-effect transistor with low on-resistance and low gate charge. It is designed for use in high-efficiency switching applications. ...
... Mode MOSFET Product Parameters: • Max Rds(on): 0.2Ω@Vgs=4.5V • Gate Charge: 5nC • Drain-Source Breakdown Voltage: 30V • Operating Temperature: -55°C to +150°C • Mounting Style: SMD/SMT • Package/ Case: SOT-...
...MOSFET Power Electronics High Efficiency High Current and Low On Resistance Product Description The IRFBC20PBF is a N-Channel Power MOSFET from International Rectifier. This power MOSFET features a maximum d...
MRF6S19140HSR3 is a N-Channel Enhancement-Mode Lateral MOSFETs . Part NO: MRF6S19140HSR3 Brand: Freescale Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD...
MRF6S19140HS is a N-Channel Enhancement-Mode Lateral MOSFETs . Part NO: MRF6S19140HS Brand: Freescale Date Code: 06+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD spe...
MRFE6S9125NR1 is a N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRFE6S9125NR1 Brand: FSL Date Code: 164+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD speciali...
MRFE6S9125NR1 is a N-Channel Enhancement-Mode Lateral MOSFET. . Part NO: MRFE6S9125NR1 Brand: FSL Date Code: 164+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specia...
MRF6S19140HSR5 is a N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6S19140HSR5 Brand: FSL Date Code: 291+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specia...
PTF102015 is a 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET. Part NO: PTF102015 Brand: FSL Date Code: 368+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD speciali...
...Transistor Features: - 30V Drain-Source Breakdown Voltage (VDSS) - 150mA Continuous Drain Current (ID) at 25°C - 8.8A Drain-Source On-State Resistance (RDS(on)) at VGS=10V - ESD Protected - Low Gate Charge -...