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... Source Voltage (VDS): 100V - RDS(on): 0.045Ω - Gate-Source Voltage (VGS): 20V - Drain Current (ID): 33A - Power Dissipation (PD):...
...MOSFET Power Electronics High-Performance High-Efficiency Low-Power Switching Solutions Product Listing: IRLL014NTRPBF – N-Channel MOSFET • Drain-Source Voltage: 65V • Gate-Source Voltage: ±20V • Drain Curre...
AON7520 MOSFET Power Electronics The AON7520 MOSFET Power Electronics from AON Semiconductor is a compact, low-power, cost-effective solution for applications such as motor control and LED lighting. This device...
... power control. Product Features: - 600V, 20A rated current - Low gate charge - Low drain-source on-resistance - Low on-......
...MOSFET Power Electronics The AON6236 is a MOSFET power electronics device that can be used to provide efficient and reliable control of power in a wide range of applications. This device is ideal for switchi...
AO3402 MOSFET Power Electronics Description: The AO3402 is a high-performance, low-cost MOSFET power electronics device designed to provide efficient and reliable power conversion. It features a low on-resistan...
...MOSFET Power Electronics – Advanced High-Performance Solution for Demanding Power Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drai...
...MOSFET Power Electronics - High-Performance Switching Solutions for Power Management Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50 V Current - Continuous D...
...MOSFET Power Electronics Power P-Channel SOT-23 -20 V -1.3 A Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) Drive Voltage (Max Rds On, Mi...
AO3481 MOSFET Power Electronics Overview: The AO3481 is a high performance, low on-resistance, N-channel MOSFET power electronics device. It is designed to provide the power and performance needed for switching...
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commer...
...MOSFET Power Electronics High Quality High Efficiency and Reliability Product Description: The SI7658ADP-T1-GE3 is a N-Channel MOSFET with an embedded gate protection diode. This device is designed for use i...
..., fast switching and low capacitance MOSFET. Features: - High Performance: Superior switching performance with low on-state resistance for increased current handling capability. - Low Voltage: ......
MOSFET Power Electronics SQD50P06-15L-GE3 High Performance Low Voltage Switching The SQD50P06-15L-GE3 MOSFET is a high performance, low on-resistance, low gate charge, low voltage MOSFET. It is suitable for hig...
... Temperature: 175°C • Packaging: Reel • Lead Free Status / RoHS Status: Lead Free / RoHS Compliant • Product Type: MOSFET • Mounting Style:...
IRFD110PBF MOSFET Power Electronics High Performance Low On-Resistance and Fast Switching IRFD110PBF MOSFET Product Parameters: Type: N-Channel MOSFET Vdss (Max): 100V Id (Max): 11A Rds(on) (Max): 0.14 @Vgs = ...
...MOSFET Power Electronics High Voltage and High Current Capacity for High Efficiency Applications The SI3456DDV-T1-E3 is an advanced N-Channel Enhancement Mode MOSFET designed for reliable high speed switchin...
...-GE3 High Performance N Channel MOSFET Power Electronics Solution Product Description: The 2N7002K-T1-GE3 is an N-Channel enhancement mode MOSFET designed for low voltage, high speed switching applications. ...
SIR466DP-T1-GE3 MOSFET Power Electronics High Performance Low Vce(sat) High Efficiency Switching Description: The SIR466DP-T1-GE3 MOSFET is a high-voltage N-channel MOSFET designed to provide maximum efficiency...
.... It has a drain-source breakdown voltage of 100V, a drain-source resistance of 0.032 Ohm, and a gate-source threshold voltage of 4V. The MOSFET is housed in a TO-220 package and is suitable for use in a wid...