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...MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Volta...
...MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Volta...
... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 30V ID = ...
... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 20V ID = ...
... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 30V ID = ...
... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Transistor Features VDS = 20V ID = ...
...Transistor , 30A 100V TO-252 Field Effect Transistor High Current Transistor types MOSFETs can be of different types, including: Depletion Mode: Normally ON. Applying the VGS would turn it OFF. Enhancement M...
...Transistor , 30A 100V TO-252 Field Effect Transistor High Current Transistor types MOSFETs can be of different types, including: Depletion Mode: Normally ON. Applying the VGS would turn it OFF. Enhancement M...
Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier Description The devices are manufacture...
Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038 Plastic DarliCM GROUPon complementary silicon power transistors are designed for general purpose amplifier and low−speed swi...
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until ...
...transistors designed for Surface-Mounted Device (SMD) plastic packages. These transistors offer high current capability, multiple current gain selections, and high power dissipation. They are suitable for ap...
...Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of...
...Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of...
NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Lead Free/RoHS Compliant (...
2SC3150L TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 3A I(C) | TO-220AB switching power mosfet STOCK LIST SN75ALS176DR 8168 TI 13+ SOP-8 THS3091D 1037 TI 16+ SOP-8 THS4001CDR 18605 TI 16+ SOP-8 THS4130IDR 1280 TI ...
P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34m (VGS = -10V) RDS(ON) < 54m (VGS = -4.5V) General Description The AO4449 uses advanced trench tec...
... Low reverse transfer capacitance Fast switching capability Avalanche energy specified General description of insulated gate bipolar transistor The 3N80 provide excellent RDS(ON)low gate charge and operation...
BCP54 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ra...