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... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
...MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) APT94N65B2C3G POWER MOSFET...
Power MOSFET FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs...
FDV305N 20V N-Channel PowerTrench MOSFET General Description This 20V N-Channel MOSFET uses Fairchilds high voltage PowerTrench process. It has been optimized for power management applications. Applications ...
Power MOSFET 200 mA, 50 V NChannel SOT23 Typical applications are DCDC converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless t...
SUD40N06-25L N-Channel 60-V (D-S), 175 MOSFET, Logic Level PRODUCT SUMMARY VDS (V) rDS(on) () ID (A)a 60 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 ABSOLUTE MAXIMUM RATINGS (TC=25 UNLESS OTHERWISE NOTED) P...
MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS (2) ...
IRFP260NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements L...
IRFR/U9120N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description ...
STW21NM60N N-CHANNEL 600V 0.19 - 17 A SECOND GENERATION MOSFET General Features 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The STx21NM60N is realiz...
MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Conti...
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Silicon PNP Power Transistors 2SB668 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For use in power amplifier and switching applications Absolute maximum ratings(Ta=25) SYMB...
Silicon NPN Power Transistors 2SC2073 DESCRIPTION With TO-220 package Complement to type 2SA940 APPLICATIONS Power amplifier applications Vertical output applications Absolute maximum ratings (Ta=25) SYMBO...
TIP120/121/122 Medium Power Linear Switching Applications Complementary to TIP125/126/127 NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Uni...
Silicon NPN Power Transistors 2SC4927 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage APPLICATIONS TV/Character display horizontal deflection output applications Absolute maxim...
Silicon NPN Power Transistors 2SD1880 DESCRIPTION With TO-3PML package High speed High breakdown voltage High reliability Built in damper diode APPLICATIONS Color TV horizontal deflection output Color di...
IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low VCE (ON) Trench IGBT Technology Low Switching Losses ...